Memristor

The perfect memristor.

blockType: AcausalFoundation.Electrical.Elements.Memristor

Path in the library:

/Physical Modeling/Fundamental/Electrical/Elements/Memristor

Description

This block allows you to simulate an ideal memristor. The behavior of a memristor is similar to that of a resistor, except that its resistance is a function of the current passed through the device (the time integral of the current). The resistance of the memristor at a given time is determined by two states of the memristor and , depending on which part of the device is in one of these states. The mathematical model of the memristor is described by the following equations:

where

— voltage on the memristor;
— current resistance;
— current;
and — memristor resistances in states and accordingly;
— the proportion of the memristor in the state . The positive current flowing from the positive terminal to the negative terminal increases . Similarly, the positive current flowing from the negative terminal to the positive terminal reduces . Meaning It must be from 0 before 1;
— time;
— the total charge required for the complete transition of the memristor from one state to another;
— window function that holds in the window between 0 before 1.

Window function:

where — the indicator of the window function, a positive integer. Function it is modified when close to 0 or 1 to improve computational stability.

Variables

Use the parameter group Initial Targets to set the priority and initial target values for the block parameter variables before modeling. For more information, see Configuring physical blocks using target values.

Ports

Conserving

# + — positive terminal
electricity

Details

The electrical port, which is the positive terminal of the memristor.

Program usage name

p

# − — negative terminal
electricity

Details

The electrical port, which is the negative terminal of the memristor.

Program usage name

n

Parameters

# Resistance of state A — resistance in the condition
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance of the memristor in the case when the entire device is in the that is , if . The value must be greater than zero.

Units	`Ohm` \| `mOhm` \| `kOhm` \| `MOhm` \| `GOhm`
Default value	`1 Ohm`
Program usage name	`R_a`
Evaluatable	Yes

# Resistance of state B — resistance in the condition
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance of the memristor in the case when the entire device is in the that is , if . The value must be greater than zero.

Units	`Ohm` \| `mOhm` \| `kOhm` \| `MOhm` \| `GOhm`
Default value	`100 Ohm`
Program usage name	`R_b`
Evaluatable	Yes

# Total charge required for full state transition — charge for a complete transition between states
C | nC | uC | mC | nA*s | uA*s | mA*s | A*s | mA*hr | A*hr | kA*hr | MA*hr

Details

The total charge required for the complete transition of the memristor from one state to another.

Units	`C` \| `nC` \| `uC` \| `mC` \| `nAs` \| `uAs` \| `mAs` \| `As` \| `mAhr` \| `Ahr` \| `kAhr` \| `MAhr`
Default value	`0.01 C`
Program usage name	`q_0`
Evaluatable	Yes

# State A fraction at t=0 — the proportion of the memristor in the state at the beginning of the simulation

Details

The initial value for at the beginning of the simulation. The value must be greater than or equal to 0 and less than or equal to 1.

Default value	`0`
Program usage name	`xi_0`
Evaluatable	Yes

# Exponent of the window function — window function indicator

Details

Indicator the window function that holds the value between 0 and 1.

Default value	`2`
Program usage name	`window_function_exponent`
Evaluatable	Yes