Engee documentation

N-Channel IGBT (Advanced)

An N-channel bipolar transistor with an isolated gate.

blockType: AcausalElectricPowerSystems.Semiconductors.IGBTAdvanced

n channel igbt advanced

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/Physical Modeling/Electrical/Semiconductors & Converters/N-Channel IGBT (Advanced)

Description

Block N-Channel IGBT (Advanced) simulates an Insulated-Gate Bipolar Transistor (IGBT). The unit provides a complete model of volt-ampere characteristics (VAC) and capacitance characteristics, suitable for modeling detailed switching characteristics and predicting losses in a component. The block allows you to model IGBT in the following ways:

In the model, the gate capacity is represented by a fixed gate-emitter capacity. and a fixed or non-linear gate collector capacity . For more information, see Charge model.

Representation as an equivalent circuit

The equivalent circuit consists of a block PNP Bipolar Transistor, controlled by the block N-Channel MOSFET as shown in the following picture.

n channel igbt advanced 1

The MOSFET source is connected to the collector of a bipolar transistor, and the MOSFET drain is connected to the base of a bipolar transistor. For the MOSFET, the threshold voltage equations given in the description of the unit are used. N-Channel MOSFET. For a bipolar transistor, the equations from the block description are used PNP Bipolar Transistor with an additional emission factor , scaling .

Block N-Channel IGBT (Advanced) It uses the on and off state characteristics set in the settings to evaluate the parameters of the internal N-channel MOSFET and bipolar PNP transistors. Based on the characteristics of the off state, the unit calculates the base-emitter voltage. and saturation current .

When the transistor is turned off, the gate-emitter voltage is zero, and the base-collector IGBT voltage is high. Therefore, the equations of the base and collector currents of a PNP transistor are simplified to



where

  • — parameter value Emission coefficient, N;

  • — Earley’s tension is in the forward direction;

  • and — positive currents directed to the collector and base, respectively.

The definitions of the remaining variables are given in the description of the block. PNP Bipolar Transistor. From the first equation, we can determine .

In the off state, the base current is zero, so , where — collector current at zero gate voltage. The base-collector voltage is , where — the voltage at which it is measured . Then the second equation takes the form

The block sets typical values and , therefore and they are determined by the formulas



The exact value Not required: the unit adjusts the MOSFET gain to ensure the correct overall gain of the device.

Parameters Collector-emitter saturation voltage, Vce(sat) and Collector current at which Vce(sat) is defined used to determine by solving the following equation:

After that, the unit calculates the MOSFET gain using the following equation:



where

  • — parameter value Gate-emitter threshold voltage, Vge(th);

  • — parameter value Gate-emitter voltage at which Vce(sat) is defined;

  • — parameter value Total forward transit time.

Voltage it is related to the transistor voltages by the ratio . The block substitutes this ratio instead of , sets the base-emitter voltage and base current equal to saturation values and converts the MOSFET equation to obtain

where — parameter value Collector-emitter saturation voltage, Vce(sat).

These calculations ensure that the specified collector current at zero gate voltage and collector-emitter saturation voltage are precisely matched. Volt-ampere characteristics are sensitive to the emission factor and the exact value . If the manufacturer’s technical description contains volt-ampere characteristics for different values , then the parameters and you can configure it manually.

Representation using a two-dimensional interpolation table

To represent using an interpolation table, set the tabular collector current values as functions of gate-emitter and collector-emitter voltages. The main advantage of this method is the speed of modeling. The device can be parameterized based on both measurement results and data from another simulation environment.

The tabular representation combines all the components of an equivalent circuit — a PNP transistor, an N-channel MOSFET, collector and emitter resistors - into one equivalent interpolation table.

To ensure that the signs of collector-emitter current and voltage are consistent, observe the following conditions:

  • If the collector-emitter voltage is 0, parameter value Tabulated collector currents, Ic(Vge,Vce) should be equal to 0;

  • Tabular power, which is the product of a parameter Tabulated collector currents, Ic(Vge,Vce) and the collector-emitter voltage must be greater than or equal to 0;

  • Tabular conductivity, which is the gradient of the parameter Tabulated collector currents, Ic(Vge,Vce) relative to the collector-emitter voltage , must be greater than or equal to 0;

  • The first gradient of the parameter Tabulated collector currents, Ic(Vge,Vce) relative to the gate-emitter voltage must be equal to 0.

Representation using a three-dimensional interpolation table

For a temperature-dependent representation using an interpolation table, set the tabular collector current values as functions of gate-emitter and collector-emitter voltages and temperature.

The tabular representation combines all the components of an equivalent circuit — a PNP transistor, an N-channel MOSFET, collector and emitter resistors - into one equivalent interpolation table.

If the thermal port of the unit is not used, the simulation temperature is set by the parameter Device simulation temperature in the parameter group Temperature Dependence.

To ensure that the signs of collector-emitter current and voltage are consistent, observe the following conditions:

  • If the collector-emitter voltage is 0, parameter value Tabulated collector currents, Ic(Vge,Vce,T) should be equal to 0;

  • Tabular power, which is the product of a parameter Tabulated collector currents, Ic(Vge,Vce,T) and the collector-emitter voltage must be greater than or equal to 0;

  • Tabular conductivity, which is the gradient of the parameter Tabulated collector currents, Ic(Vge,Vce,T) relative to the collector-emitter voltage , must be greater than or equal to 0;

  • The first gradient of the parameter Tabulated collector currents, Ic(Vge,Vce,T) relative to the gate-emitter voltage must be equal to 0.

Charge model

The block simulates capacitances with fixed values or tabular values depending on the collector-emitter voltage. The gate-emitter and gate-collector capacitances can be set directly, or calculated from the input and output capacitances. Parameter Parameterization in the parameter group Junction Capacitance provides the following parameterization methods:

  • Specify fixed input, reverse transfer, and output capacitance (by default) — set fixed parameter values from the technical description and convert the values of the inlet and outlet tanks to capacity values, as described below;

  • Specify fixed gate-emitter, gate-collector, and output capacitance — set fixed capacity parameter values directly;

  • Specify tabulated input, reverse transfer, and output capacitance — set the tabular values of the collector-emitter capacitance and voltage based on the graphs from the technical description, then convert the values of the input and output capacitances to the capacitance values as described below;

  • Specify tabulated gate-emitter, gate-collector, and output capacitance — set tabular values of capacitance and collector-emitter voltage.

Use one of the tabular methods (Specify tabulated input, reverse transfer, and output capacitance or Specify tabulated gate-emitter, gate-collector, and output capacitance), if the technical description shows a graph of the dependence of the capacitance on the collector-emitter voltage. Using tabular capacity values will provide more accurate dynamic characteristics and avoid the need for iterative parameter settings.

If you use the method Specify fixed gate-emitter, gate-collector, and output capacitance or Specify tabulated gate-emitter, gate-collector, and output capacitance, then in the parameter group Junction Capacitance you can directly specify the parameter values Gate-emitter capacitance, Gate-collector capacitance and Collector-emitter capacitance. In other cases, the block calculates them based on the parameter values. Input capacitance, Cies, Reverse transfer capacitance, Cres and Output capacitance, Coes. These two parameterization methods are related as follows:

With fixed capacities (Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-emitter, gate-collector, and output capacitance) the model contains a fixed gate-emitter capacitance and a fixed or non-linear gate collector capacity . If for the parameter Charge-voltage linearity select a value Gate-collector charge function is nonlinear, the gate-collector charge dependence is determined by a piecewise linear function shown in the following figure.

n channel igbt advanced 2 en

With such a nonlinear capacitance, the gate-emitter and collector-emitter voltage profiles take the shape shown in the following figure. The collector-emitter voltage drop consists of regions 2 and 3, and the gate-emitter voltage has two time constants — before and after the threshold voltage .

n channel igbt advanced 3 en

If the IGBT gate is controlled via an external resistance , capacitance values of the capacitors , and it can be defined as follows:

  1. Ask so, to get the required time constant for in the 1 area. The time constant is equal to the product and . Instead, you can use the value from the technical description.

  2. Ask so, to get the required gradient in the 2 area. The gradient is .

  3. Ask equal to the voltage at which the gradient changes , minus the threshold voltage .

  4. Ask so, to get the required Miller length and time constant in the region of 4.

The model simplifies the actual charge distribution, so several iterations of these four steps may be required to best match the measured data.

If for the parameter I-V characteristics defined by the value is set Fundamental nonlinear equations, the tail end of the collector current when the IGBT is turned off is determined by the parameter Total forward transit time.

If for the parameter I-V characteristics defined by the value is set Lookup table (2D, temperature independent) or Lookup table (3D, temperature dependent), the tail end of the collector current when the IGBT is turned off is determined by the parameter Turn-off tail current transit time:

where — IGBT shutdown current, — IGBT switching current, — shutdown time, — parameter value Turn-off tail current transit time.

The model takes charge into account, therefore, in order to correctly reproduce the dynamics of switching on and off, it is necessary to simulate the impedance of the gate control circuit. If the control circuit is represented by a controlled voltage source, a suitable series resistor should be connected between the source and the gate.

Fine-tuning of volt-ampere characteristics

To represent the model as an equivalent schema, use the group parameters Advanced to fine-tune the volt-ampere characteristics of the device. Configuration requires a manufacturer’s technical description with graphs of the dependence of collector current on collector-emitter voltage at different gate-emitter voltages. These parameters have the following effects

  • Parameter Emission coefficient, N determines the shape of the volt-ampere characteristics near the origin;

  • Parameters Collector resistance, RC and Emitter resistance, RE they affect the slope of the VAC at higher currents and when the device is fully opened under the influence of high gate-emitter voltage;

  • Parameter Forward Early voltage, VAF affects the shape of the VAC at gate-emitter voltages near the value Gate-emitter threshold voltage, Vge(th).

Modeling of temperature dependence

For a two-dimensional interpolation table, the electrical equations are independent of temperature. However, the temperature dependence can be modeled using a three-dimensional table or using an equivalent scheme.

The equivalent scheme uses the temperature dependences of the constituent components. The defining equations are given in the block descriptions. N-Channel MOSFET and PNP Bipolar Transistor.

If the technical description does not contain information about collector current at zero gate voltage For a higher measurement temperature, an energy gap can be set. a typical value for a semiconductor. For silicon, the energy gap is usually 1.11 EV.

Thermal port

The unit has an additional thermal port, hidden by default. To use the thermal port H and the parameters of the thermal model, check the box Enable thermal port.

Use the thermal port to simulate the effect of the generated heat and the temperature of the device.

Assumptions and limitations

The model used in the block is based on the following assumptions:

  • The block does not allow you to directly set the initial conditions for the containers. If you check the box Start simulation from steady state in the block Solver Configuration, the initial voltages are calculated in accordance with the calculated steady-state mode. Otherwise, the voltages at the beginning of the simulation are zero.

  • Non-zero capacitance values may be required to avoid numerical problems, but zero values can increase the simulation speed.

  • The unit does not take into account the effect of temperature on the capacity.

Ports

Conserving

# E — The emitter
electricity

Details

A non-directional port connected to the collector terminal of a PNP transistor.

Program usage name

emitter

# G — the shutter
electricity

Details

A non-directional port connected to the IGBT gate terminal.

Program usage name

gate

# H — thermal port
warm

Details

Non-directional heat port.

Dependencies

To use this port, check the box Enable thermal port.

Program usage name

thermal_port

# C — collector
electricity

Details

A non-directional port connected to the terminal of the PNP transistor emitter.

Program usage name

collector

Parameters

Thermal Port

# Thermal resistances, [R1, R2, ..., Rn] — the vector of thermal resistances for the Foster model
K/W

Details

Vector from the values of thermal resistances represented by Foster elements in the heating network. All these values must be greater than zero.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Cauer model parameterized with Foster coefficients.

Units

K/W
Default value

[0.08, 0.14, 0.22, 0.16] K/W
Program usage name

thermal_resistance_foster_vector
Evaluatable

Yes

# Thermal masses, [M1, M2, ..., Mn] — the vector of heat capacity values for the Foster model
J/K | kJ/K

Details

Vector from values of heat capacities, where — this is the number of coefficients of the Foster model in the heating network. All these values must be greater than zero.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Cauer model parameterized with Foster coefficients, and for the parameter Thermal mass parameterization — value By thermal mass.

Units

J/K | kJ/K
Default value

[0.001, 0.005, 0.05, 0.5] J/K
Program usage name

thermal_mass_foster_vector
Evaluatable

Yes

# Thermal masses, [M1, M2, ..., Mn] — vector of heat capacity values for the Kauer model
J/K | kJ/K

Details

Vector from values of heat capacities, where — this is the number of coefficients of the Kauer model in the heating network. All these values must be greater than zero.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Cauer model, and for the parameter Thermal mass parameterization — value By thermal mass.

Units

J/K | kJ/K
Default value

[0.1, 0.3, 1.0] J/K
Program usage name

thermal_mass_cauer_vector
Evaluatable

Yes

# Thermal time constants, [t1, t2, ..., tn] — the vector of thermal time constants for the Foster model
s | ns | us | ms | min | hr | d

Details

Vector from values of thermal time constants, where — this is the number of Foster elements in the heating network. All these values must be greater than zero.

The value of the heat capacity is calculated as , where , and — heat capacity, thermal time constant and thermal resistance for - th Foster element.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Cauer model parameterized with Foster coefficients, and for the parameter Thermal mass parameterization — value By thermal time constants.

Units

s | ns | us | ms | min | hr | d
Default value

[7.0e-5, 0.0007, 0.01, 0.08] s
Program usage name

thermal_time_constant_foster_vector
Evaluatable

Yes

# Thermal resistances, [R1, R2, ..., Rn] — the vector of thermal resistances for the Kauer model
K/W

Details

Vector from the values of thermal resistances represented by the Kauer elements in the heating network. All these values must be greater than zero.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Cauer model.

Units

K/W
Default value

[1.0, 3.0, 10.0] K/W
Program usage name

thermal_resistance_cauer_vector
Evaluatable

Yes

# Thermal time constants, [t1, t2, ..., tn] — vector of thermal time constants for the Kauer model
s | ns | us | ms | min | hr | d

Details

Vector from values of thermal time constants, where — this is the number of Kauer elements in the heating network. All these values must be greater than zero.

The value of the heat capacity is calculated as , where , and — heat capacity, thermal time constant and thermal resistance for - the go element of the Cowera.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Cauer model, and for the parameter Thermal mass parameterization — value By thermal time constants.

Units

s | ns | us | ms | min | hr | d
Default value

[1.0, 3.0, 10.0] s
Program usage name

thermal_time_constant_cauer_vector
Evaluatable

Yes

# Junction and case thermal masses, [M_J, M_C] — vector of heat capacity values
J/K | kJ/K

Details

Vector [M_J, M_C] of the two values of the heat capacity. The first value M_J — this is the heat capacity of the transition. The second value M_C — this is the heat capacity of the case.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Specify junction and case thermal parameters, and for the parameter Thermal mass parameterization — value By thermal mass.

Units

J/K | kJ/K
Default value

[0.0, 1.0] J/K
Program usage name

thermal_mass_vector
Evaluatable

Yes

# Junction and case initial temperatures, [T_J, T_C] — vector of initial temperatures
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

Vector [T_J, T_C] of the two temperature values. The first value T_J — this is the initial transition temperature. The second value T_C — this is the initial temperature of the case.

Dependencies

To use this option, check the box Enable thermal port and for the parameter Thermal network set the value Specify junction and case thermal parameters.

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

[25.0, 25.0] degC
Program usage name

T_thermal_mass_vector_start
Evaluatable

Yes

# Thermal network — internal thermal model
Specify junction and case thermal parameters | Cauer model | Cauer model parameterized with Foster coefficients | External

Details

Choose an internal thermal model:

  • Specify junction and case thermal parameters;

  • Cauer model;

  • Cauer model parameterized with Foster coefficients;

  • External.

Dependencies

To use this option, check the box Enable thermal port.

Values

Specify junction and case thermal parameters | Cauer model | Cauer model parameterized with Foster coefficients | External
Default value

Specify junction and case thermal parameters
Program usage name

thermal_network_parameterization
Evaluatable

No

# Enable thermal port — activating the thermal port

Details

Check this box to use the H thermal port and simulate thermal effects.

Default value

false (switched off)
Program usage name

has_thermal_port
Evaluatable

No

# Initial node temperatures, [T1, T2, ..., Tn] — the initial temperature vector for the Foster model
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

The vector of absolute temperature values of each element of the Foster model.

Dependencies

To use this option, check the box Enable thermal port and for the parameter Thermal network set the value Cauer model parameterized with Foster coefficients.

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

[25.0, 25.0, 25.0, 25.0] degC
Program usage name

T_thermal_mass_foster_vector_start
Evaluatable

Yes

# Thermal mass parameterization — parameterization of heat capacity
By thermal time constants | By thermal mass

Details

Choose a method for setting the heat capacity:

  • By thermal time constants (default) — parameterization of heat capacity in terms of thermal time constants;

  • By thermal mass — setting the heat capacity values directly.

Dependencies

To use this option, check the box Enable thermal port and for the parameter Thermal network set the value Specify junction and case thermal parameters, Cauer model or Cauer model parameterized with Foster coefficients.

Values

By thermal time constants | By thermal mass
Default value

By thermal time constants
Program usage name

thermal_mass_parameterization
Evaluatable

No

# Junction and case thermal time constants, [t_J, t_C] — vector of thermal time constants
s | ns | us | ms | min | hr | d

Details

Vector [t_J, t_C] of the two values of the thermal time constants. The first value t_J — this is the thermal constant of the transition time. The second value t_C — this is the thermal time constant of the hull.

Dependencies

To use this option, check the box Enable thermal port, for the parameter Thermal network set the value Specify junction and case thermal parameters, and for the parameter Thermal mass parameterization — value By thermal time constants.

Units

s | ns | us | ms | min | hr | d
Default value

[0.0, 10.0] s
Program usage name

thermal_time_constant_vector
Evaluatable

Yes

# Thermal masses initial temperatures, [T1, T2, ..., Tn] — initial temperature vector for the Kauer model
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

The vector of temperature values. It corresponds to the temperature difference for each heat capacity in the model.

Dependencies

To use this option, check the box Enable thermal port and for the parameter Thermal network set the value Cauer model.

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

[25.0, 25.0, 25.0] degC
Program usage name

T_thermal_mass_cauer_vector_start
Evaluatable

Yes

# Junction-case and case-ambient (or case-heatsink) thermal resistances, [R_JC, R_CA] — the vector of thermal resistances
K/W

Details

Vector [R_JC, R_CA] of the two values of thermal resistance. The first value R_JC — this is the thermal resistance between the junction and the housing. The second value R_CA — this is the thermal resistance between the H port and the device body.

Dependencies

To use this option, check the box Enable thermal port and for the parameter Thermal network set the value Specify junction and case thermal parameters.

Units

K/W
Default value

[0.0, 10.0] K/W
Program usage name

thermal_resistance_vector
Evaluatable

Yes

Main

# Vector of temperatures, T — temperature vector
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

The temperature vector used for searching through the interpolation table. The values of the vector must strictly increase. The values may be unevenly distributed.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Lookup table (3D, temperature dependent).

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

[25.0, 125.0] degC
Program usage name

T_vector
Evaluatable

Yes

# Voltage at which Ices is defined — the voltage at which the current is determined
V | uV | mV | kV | MV

Details

The voltage used when measuring the parameter Zero gate voltage collector current, Ices.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

V | uV | mV | kV | MV
Default value

600.0 V
Program usage name

V_ces
Evaluatable

Yes

# I-V characteristics defined by — IGBT representation
Fundamental nonlinear equations | Lookup table (2D, temperature independent) | Lookup table (3D, temperature dependent)

Details

Select the IGBT representation:

  • Fundamental nonlinear equations (default) — an equivalent circuit based on a bipolar PNP transistor and an N-channel MOSFET;

  • Lookup table (2D, temperature independent) — two-dimensional interpolation table of collector current as a function of gate-emitter and collector-emitter voltages;

  • Lookup table (3D, temperature dependent) — three-dimensional interpolation table of collector current as a function of gate-emitter and collector-emitter voltages and temperature.

Values

Fundamental nonlinear equations | Lookup table (2D, temperature independent) | Lookup table (3D, temperature dependent)
Default value

Fundamental nonlinear equations
Program usage name

model_type
Evaluatable

No

# Vector of gate-emitter voltages, Vge — gate-emitter voltage vector
V | uV | mV | kV | MV

Details

The gate-emitter voltage vector used for searching through the interpolation table. The values of the vector must strictly increase. The values may be unevenly distributed.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Lookup table (2D, temperature independent) or Lookup table (3D, temperature dependent).

Units

V | uV | mV | kV | MV
Default value

[-1.0, 0.0, 2.0, 3.0, 5.0, 6.0, 7.0, 8.0, 10.0, 12.0, 15.0, 18.0, 20.0] V
Program usage name

V_ge_vector
Evaluatable

Yes

# Tabulated collector currents, Ic(Vge,Vce) — tabular values of collector currents, independent of temperature
A | pA | nA | uA | mA | kA | MA

Details

Tabular values of collector currents as functions of gate-emitter and collector-emitter voltages used for searching in a two-dimensional table. Each value sets the collector current for the corresponding gate-emitter and collector-emitter voltage pair. The size of the matrix must correspond to the dimensions determined by the gate-emitter and collector-emitter voltage vectors.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Lookup table (2D, temperature independent).

Units

A | pA | nA | uA | mA | kA | MA
Default value

[0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0; 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0; 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0; 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0; 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0; 0.0 0.0 0.0 0.81 3.13 4.97 6.03 6.53 6.84 7.01 7.19 7.32 7.44 7.55 7.67 7.78 7.89 8.0 8.07 8.07; 0.0 0.0 0.0 1.07 5.5 12.93 22.09 29.14 35.27 38.97 41.37 43.08 44.52 45.45 46.28 46.85 47.41 47.76 48.06 48.36; 0.0 0.0 0.0 1.1 6.99 16.51 28.38 41.53 55.76 69.08 80.5 89.56 96.13 101.45 105.15 107.99 110.09 111.87 113.54 114.95; 0.0 0.0 0.0 1.36 6.26 17.43 33.6 50.43 71.75 93.61 114.64 134.42 151.44 164.25 177.06 189.88 202.69 215.51 228.32 241.14; 0.0 0.0 0.0 1.42 6.4 18.7 36.19 55.23 79.71 106.22 131.28 156.62 182.79 208.97 235.15 261.32 287.5 313.67 339.85 366.02; 0.0 0.0 0.0 1.45 6.81 20.01 39.61 60.63 88.74 117.7 147.16 191.87 237.14 282.42 327.69 372.96 418.23 463.5 508.77 554.04; 0.0 0.0 0.0 1.49 6.97 20.55 41.34 64.15 94.91 126.1 170.16 233.77 297.38 360.98 424.59 488.19 551.8 615.4 679.01 742.62; 0.0 0.0 0.0 1.5 7.5 20.96 42.17 66.19 98.34 131.14 187.84 263.46 339.09 414.72 490.34 565.97 641.6 717.22 792.85 868.48] A
Program usage name

I_c_matrix
Evaluatable

Yes

# Vector of collector-emitter voltages, Vce — collector-emitter voltage vector
V | uV | mV | kV | MV

Details

The collector-emitter voltage vector used for searching through the interpolation table. The values of the vector must strictly increase. The values may be unevenly distributed.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Lookup table (2D, temperature independent) or Lookup table (3D, temperature dependent).

Units

V | uV | mV | kV | MV
Default value

[0.0, 0.25, 0.5, 0.75, 1.0, 1.26, 1.51, 1.76, 2.01, 2.26, 2.51, 2.76, 3.01, 3.27, 3.52, 3.77, 4.02, 4.27, 4.52, 4.77] V
Program usage name

V_ce_vector
Evaluatable

Yes

# Collector-emitter saturation voltage, Vce(sat) — collector-emitter saturation voltage
V | uV | mV | kV | MV

Details

The collector-emitter voltage for a typical switched-on state is specified by the manufacturer.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

V | uV | mV | kV | MV
Default value

2.6 V
Program usage name

V_ce_sat
Evaluatable

Yes

# Tabulated collector currents, Ic(Vge,Vce,T) — tabular values of collector currents, depending on temperature
A | pA | nA | uA | mA | kA | MA

Details

Tabular values of collector currents as functions of gate-emitter voltage, collector-emitter voltage, and temperature used for searching in a three-dimensional table. Each value sets the collector current for the corresponding gate-emitter and collector-emitter voltage pair at a certain temperature. The size of the array must correspond to the dimensions defined by the gate-emitter and collector-emitter voltage and temperature vectors.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Lookup table (3D, temperature dependent).

Units

A | pA | nA | uA | mA | kA | MA
Default value

zeros(13, 20, 2) A
Program usage name

I_c_array_3D
Evaluatable

Yes

# Gate-emitter voltage at which Vce(sat) is defined — gate-emitter voltage during measurement
V | uV | mV | kV | MV

Details

Gate-emitter voltage used in measurement and .

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

V | uV | mV | kV | MV
Default value

10.0 V
Program usage name

V_ge_sat
Evaluatable

Yes

# Collector current at which Vce(sat) is defined — collector current during measurement
A | pA | nA | uA | mA | kA | MA

Details

Collector-emitter current at gate-emitter voltage and collector-emitter voltage .

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

A | pA | nA | uA | mA | kA | MA
Default value

400.0 A
Program usage name

I_ce_sat
Evaluatable

Yes

# Zero gate voltage collector current, Ices — collector current at zero gate voltage
A | pA | nA | uA | mA | kA | MA

Details

Collector current at zero gate-emitter voltage and applied high collector-emitter voltage, that is, when the device is switched off. The collector-emitter voltage is set by the parameter Voltage at which Ices is defined.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

A | pA | nA | uA | mA | kA | MA
Default value

2.0 mA
Program usage name

I_ces
Evaluatable

Yes

# Measurement temperature — Measurement temperature
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

Temperature , for which the device parameters are specified.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

25.0 degC
Program usage name

T_measurement
Evaluatable

Yes

# Gate-emitter threshold voltage, Vge(th) — gate-emitter threshold voltage
V | uV | mV | kV | MV

Details

The threshold voltage used in the MOSFET equations.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

V | uV | mV | kV | MV
Default value

6.0 V
Program usage name

V_threshold
Evaluatable

Yes

Junction Capacitance

# Output capacitance, Coes — output capacity
F | pF | nF | uF | mF

Details

Collector-emitter capacitance with the gate and emitter closed to each other.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed input, reverse transfer, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

0.0 nF
Program usage name

C_oes
Evaluatable

Yes

# Reverse transfer capacitance, Cres — passing capacity
F | pF | nF | uF | mF

Details

Collector-gate capacitance when the emitter is connected to the ground.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed input, reverse transfer, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

2.7 nF
Program usage name

C_res
Evaluatable

Yes

# Total forward transit time — total forward charge travel time
s | ns | us | ms | min | hr | d

Details

Forward charge travel time for a PNP transistor of the IGBT internal model. This parameter affects the rate at which charge is removed from the channel when the IGBT is turned off.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

s | ns | us | ms | min | hr | d
Default value

0.0 us
Program usage name

forward_transit_time
Evaluatable

Yes

# Collector-gate voltage below which oxide capacitance is active — activation voltage of the oxide tank
V | uV | mV | kV | MV

Details

Collector-gate voltage, at which the collector-gate capacitance switches between the off-state capacitance and the capacity of the enabled state .

Dependencies

To use this parameter, set for the parameter Charge-voltage linearity meaning Gate-collector charge function is nonlinear.

Units

V | uV | mV | kV | MV
Default value

-5.0 V
Program usage name

V_C_oxide
Evaluatable

Yes

# Reverse transfer capacitance, Cres(Vce) — pass-through capacity with tabular input signal
F | pF | nF | uF | mF

Details

Collector-gate capacitance when the emitter is connected to the ground, which is tabulated to match the collector-emitter voltage.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated input, reverse transfer, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

[55.0, 9.0, 5.5, 3.1, 2.5, 2.1, 1.9, 1.8, 1.7] nF
Program usage name

C_res_vector
Evaluatable

Yes

# Gate-emitter capacitance, Cge(Vge,Vce) — gate-emitter capacitance with tabular values
F | pF | nF | uF | mF

Details

The capacitance between the gate and the emitter with tabular values of the gate-emitter voltage and collector-emitter voltage.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated gate-emitter, gate-collector, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

[25.0 31.0 26.5 24.9 25.0 24.9 24.6 24.7 24.8] nF
Program usage name

C_ge_matrix
Evaluatable

Yes

# Charge-voltage linearity — linearity of charge versus voltage dependence
Gate-collector capacitance is constant | Gate-collector charge function is nonlinear

Details

Choose a way to represent the gate-collector capacity:

  • Gate-collector capacitance is constant (default) — the capacity value is constant and is determined according to the selected parameter: directly or according to the technical description;

  • Gate-collector charge function is nonlinear — the gate-collector charge dependence is set by a piecewise linear function from the Charge model section; two additional parameters become available to set the gate-collector charge function.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed input, reverse transfer, and output capacitance or Specify fixed gate-emitter, gate-collector, and output capacitance.

Values

Gate-collector capacitance is constant | Gate-collector charge function is nonlinear
Default value

Gate-collector capacitance is constant
Program usage name

charge_linearity_parameterization
Evaluatable

No

# Input capacitance, Cies(Vce) — input capacity with tabular input signal
F | pF | nF | uF | mF

Details

The gate-emitter capacitance with the collector and emitter closed to each other, expressed tabularly with the collector-emitter voltage.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated input, reverse transfer, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

[80.0, 40.0, 32.0, 28.0, 27.5, 27.0, 26.5, 26.5, 26.5] nF
Program usage name

C_ies_vector
Evaluatable

Yes

# Collector-emitter capacitance, Cce(Vce) — collector-emitter capacity with tabular values
F | pF | nF | uF | mF

Details

The capacitance between collector and emitter, specified in the collector-emitter voltage table.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated gate-emitter, gate-collector, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

[5.0, 11.0, 6.5, 4.9, 3.5, 2.7, 2.1, 1.7, 1.4] nF
Program usage name

C_ce_vector
Evaluatable

Yes

# Turn-off tail current transit time — total travel time of the tail current in the forward direction
s | ns | us | ms | min | hr | d

Details

The time of passage of the tail part of the current.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Lookup table (2D, temperature independent) or Lookup table (3D, temperature dependent).

Units

s | ns | us | ms | min | hr | d
Default value

0.0 us
Program usage name

t_transit
Evaluatable

Yes

# Gate-collector capacitance, Cgc(Vge,Vce) — gate-collector capacity with tabular values
F | pF | nF | uF | mF

Details

The capacitance between the gate and collector with tabular values matching the gate-emitter voltage and collector-emitter voltage.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated gate-emitter, gate-collector, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

[55.0 9.0 5.5 3.1 2.5 2.1 1.9 1.8 1.7] nF
Program usage name

C_gc_matrix
Evaluatable

Yes

# Collector-emitter capacitance — collector-emitter capacity
F | pF | nF | uF | mF

Details

The capacitance between the collector and the emitter.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed gate-emitter, gate-collector, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

0.0 nF
Program usage name

C_ce
Evaluatable

Yes

# Input capacitance, Cies — input capacity
F | pF | nF | uF | mF

Details

Gate-emitter capacitance with the collector and emitter closed to each other.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed input, reverse transfer, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

26.4 nF
Program usage name

C_ies
Evaluatable

Yes

# Corresponding gate-emitter voltages for tabulated gate capacitance, Vge — corresponding gate-emitter voltages
V | uV | mV | kV | MV

Details

Gate-emitter voltages corresponding to tabular values of gate capacitances.

If a scalar is specified, the parameters are Gate-emitter capacitance, Cge(Vge,Vce) and Gate-collector capacitance, Cgc(Vge,Vce) they are vectors. If a vector is specified, these parameters are matrices.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated gate-emitter, gate-collector, and output capacitance.

Units

V | uV | mV | kV | MV
Default value

[0.0] V
Program usage name

V_C_ge_vector
Evaluatable

Yes

# Output capacitance, Coes(Vce) — output capacity with tabular input signal
F | pF | nF | uF | mF

Details

Collector-emitter capacitance with the gate and emitter closed to each other, expressed tabularly with collector-emitter voltage.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated input, reverse transfer, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

[60.0, 20.0, 12.0, 8.0, 6.0, 4.8, 4.0, 3.5, 3.1] nF
Program usage name

C_oes_vector
Evaluatable

Yes

# Gate-collector oxide capacitance — oxide tank gate collector
F | pF | nF | uF | mF

Details

Gate-collector capacity when the device is switched on and the collector-gate voltage is low.

Dependencies

To use this parameter, set for the parameter Charge-voltage linearity meaning Gate-collector charge function is nonlinear.

Units

F | pF | nF | uF | mF
Default value

20.0 nF
Program usage name

C_oxide
Evaluatable

Yes

# Parameterization — parameterization of the transition capacity
Specify fixed input, reverse transfer, and output capacitance | Specify fixed gate-emitter, gate-collector, and output capacitance | Specify tabulated input, reverse transfer, and output capacitance | Specify tabulated gate-emitter, gate-collector, and output capacitance

Details

Select the block parameterization method:

  • Specify fixed input, reverse transfer, and output capacitance (by default) — set fixed parameter values from the technical description and convert the input and output capacity values to capacity values, as described in the Charge model section;

  • Specify fixed gate-emitter, gate-collector, and output capacitance — set fixed values of transition capacity parameters directly;

  • Specify tabulated input, reverse transfer, and output capacitance — set tabular values of the collector-emitter capacitance and voltage based on the graphs from the technical description, then convert the values of the input and output capacitances to capacitance values, as described in the Charge model section;

  • Specify tabulated gate-emitter, gate-collector, and output capacitance — set tabular values of junction capacitances and collector-emitter voltage.

Values

Specify fixed input, reverse transfer, and output capacitance | Specify fixed gate-emitter, gate-collector, and output capacitance | Specify tabulated input, reverse transfer, and output capacitance | Specify tabulated gate-emitter, gate-collector, and output capacitance
Default value

Specify fixed input, reverse transfer, and output capacitance
Program usage name

C_parameterization
Evaluatable

No

# Gate-emitter capacitance — gate-emitter capacity
F | pF | nF | uF | mF

Details

The capacitance between the gate and the emitter.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed gate-emitter, gate-collector, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

23.7 nF
Program usage name

C_ge
Evaluatable

Yes

# Corresponding collector-emitter voltages, Vce — corresponding collector-emitter voltages
V | uV | mV | kV | MV

Details

Collector-emitter voltages corresponding to the tabular values of the capacitances.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify tabulated input, reverse transfer, and output capacitance or Specify tabulated gate-emitter, gate-collector, and output capacitance.

Units

V | uV | mV | kV | MV
Default value

[0.0, 1.0, 2.0, 5.0, 10.0, 15.0, 20.0, 25.0, 30.0] V
Program usage name

V_C_ce_vector
Evaluatable

Yes

# Gate-collector capacitance — gate collector capacity
F | pF | nF | uF | mF

Details

The capacity between the gate and the collector.

Dependencies

To use this parameter, set for the parameter Parameterization meaning Specify fixed gate-emitter, gate-collector, and output capacitance.

Units

F | pF | nF | uF | mF
Default value

2.7 nF
Program usage name

C_gc
Evaluatable

Yes

Advanced

# Forward Early voltage, VAF — Earley’s tension in the forward direction
V | uV | mV | kV | MV

Details

The Earley voltage is in the forward direction for the PNP transistor used in the IGBT model. For more information, see the description of the block. PNP Bipolar Transistor.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

V | uV | mV | kV | MV
Default value

200.0 V
Program usage name

V_A
Evaluatable

Yes

# Emitter resistance, RE — emitter resistance
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The emitter resistance.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.001 Ohm
Program usage name

R_e
Evaluatable

Yes

# Forward current transfer ratio, BF — forward current transmission ratio

Details

The ideal maximum forward current gain of the PNP transistor used in the IGBT model. For more information, see the description of the block. PNP Bipolar Transistor.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Default value

50.0
Program usage name

beta_f
Evaluatable

Yes

# Internal gate resistance, RG — internal resistance of the shutter
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance of the internal gate resistor at the measurement temperature. This is not the value of the gate resistance of the external circuit, which should be modeled outside the IGBT.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.001 Ohm
Program usage name

R_g
Evaluatable

Yes

# Emission coefficient, N — emission coefficient

Details

The emission coefficient, or ideality coefficient, of a bipolar transistor.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Default value

1.0
Program usage name

N
Evaluatable

Yes

# Collector resistance, RC — collector resistance
Ohm | mOhm | kOhm | MOhm | GOhm

Details

Collector resistance.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.001 Ohm
Program usage name

R_c
Evaluatable

Yes

Packaging

# Collector lead resistance — collector output resistance of the transistor
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The collector terminal resistance of the transistor, that is, the resistance of the series terminals connected to the collector contact. Use this parameter to simulate parasitic effects in a transistor.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.0 Ohm
Program usage name

R_collector_lead
Evaluatable

Yes

# Gate lead resistance — transistor gate output resistance
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance of the gate terminal of the transistor, that is, the resistance of the series terminals connected to the gate contact. Use this parameter to simulate parasitic effects in a transistor.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.0 Ohm
Program usage name

R_gate_lead
Evaluatable

Yes

# Gate lead inductance — inductance of the transistor gate output
H | nH | uH | mH

Details

The inductance of the gate terminal of the transistor, that is, the inductance of the series terminals connected to the gate contact. Use this parameter to simulate parasitic effects in a transistor.

Units

H | nH | uH | mH
Default value

0.0 nH
Program usage name

L_gate_lead
Evaluatable

Yes

# Collector lead inductance — inductance of the collector output of the transistor
H | nH | uH | mH

Details

The inductance of the collector terminal of the transistor, that is, the inductance of the series terminals connected to the collector contact. Use this parameter to simulate parasitic effects in a transistor.

Units

H | nH | uH | mH
Default value

0.0 nH
Program usage name

L_collector_lead
Evaluatable

Yes

# Emitter lead inductance — inductance of the transistor emitter output
H | nH | uH | mH

Details

The inductance of the transistor emitter terminal, that is, the inductance of the serial terminals connected to the emitter contact. Use this parameter to simulate parasitic effects in a transistor.

Units

H | nH | uH | mH
Default value

0.0 nH
Program usage name

L_emitter_lead
Evaluatable

Yes

# Emitter lead resistance — output resistance of the transistor emitter
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance of the transistor emitter terminal, that is, the resistance of the serial terminals connected to the emitter contact. Use this parameter to simulate parasitic effects in a transistor.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.0 Ohm
Program usage name

R_emitter_lead
Evaluatable

Yes

Temperature Dependence

# Zero gate voltage collector current, Ices, at second measurement temperature — collector current at zero gate voltage and second temperature
A | pA | nA | uA | mA | kA | MA

Details

Collector current at zero gate voltage and the second measurement temperature.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Ices, and Vce(sat) at second measurement temperature.

Units

A | pA | nA | uA | mA | kA | MA
Default value

100.0 mA
Program usage name

I_ces_T2
Evaluatable

Yes

# Collector-emitter saturation voltage, Vce(sat), at second measurement temperature — collector-emitter saturation voltage at the second temperature
V | uV | mV | kV | MV

Details

Collector-emitter saturation voltage at the second measurement temperature and the values of collector current and gate-emitter voltage set by the corresponding parameters in the group Main.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Ices, and Vce(sat) at second measurement temperature or Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Units

V | uV | mV | kV | MV
Default value

3.0 V
Program usage name

V_ce_sat_T2
Evaluatable

Yes

# Saturation current temperature exponent, XTI — temperature indicator of the degree of saturation current

Details

An indicator of the degree of saturation current for the device being modeled. If there is a dependency schedule depending on the temperature, use it to fine tune .

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Ices, and Vce(sat) at second measurement temperature or Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Default value

3.0
Program usage name

XTI
Evaluatable

Yes

# Second measurement temperature — The second measurement temperature
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

The second temperature , at which the parameters are measured Zero gate voltage collector current, Ices, at second measurement temperature and Collector-emitter saturation voltage, Vce(sat), at second measurement temperature.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Ices, and Vce(sat) at second measurement temperature or Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

125.0 degC
Program usage name

T2_measurement
Evaluatable

Yes

# Internal gate resistance temperature coefficient — the temperature coefficient of the internal resistance of the shutter
1/K | 1/degR | 1/deltaK | 1/deltadegC | 1/deltadegF | 1/deltadegR

Details

Relative rate of change internal resistance of the shutter with a fever. The resistance is calculated as , where — parameter value Internal gate resistance, RG.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Ices, and Vce(sat) at second measurement temperature or Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Units

1/K | 1/degR | 1/deltaK | 1/deltadegC | 1/deltadegF | 1/deltadegR
Default value

0.0 1/K
Program usage name

alpha_R_g
Evaluatable

Yes

# Device simulation temperature — Device simulation temperature
K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR

Details

Temperature , at which the device is modeled.

Dependencies

To use this option, uncheck the box. Enable thermal port and fulfill one of the conditions:

  • set for the parameter I-V characteristics defined by meaning Lookup table (3D, temperature dependent);

  • set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and for the parameter Parameterization — value Specify Ices, and Vce(sat) at second measurement temperature or Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Units

K | degC | degF | degR | deltaK | deltadegC | deltadegF | deltadegR
Default value

300.0 K
Program usage names

T_device, T_device_3D
Evaluatable

Yes

# Energy gap, EG — energy gap
J | mJ | kJ | MJ | mW*hr | W*hr | kW*hr | MW*hr | eV | cal | kcal | Btu_IT

Details

The value of the energy gap.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Units

J | mJ | kJ | MJ | mW*hr | W*hr | kW*hr | MW*hr | eV | cal | kcal | Btu_IT
Default value

1.11 eV
Program usage name

E_g
Evaluatable

Yes

# Parameterization — parameterization of temperature dependence
None - Simulate at parameter measurement temperature | Specify Ices, and Vce(sat) at second measurement temperature | Specify Vce(sat) at second measurement temperature plus the energy gap, EG

Details

Choose a method for parameterizing the temperature dependence:

  • None - Simulate at parameter measurement temperature (by default) — do not simulate temperature dependence;

  • Specify Ices, and Vce(sat) at second measurement temperature — simulate temperature effects on collector current at zero gate voltage and collector-emitter voltage at the second measurement temperature;

  • Specify Vce(sat) at second measurement temperature plus the energy gap, EG — simulate temperature effects based on collector-emitter voltage at the second measurement temperature and the energy gap; use this method if the technical description does not contain information about the collector current at zero gate voltage. at a higher measurement temperature.

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations.

Values

None - Simulate at parameter measurement temperature | Specify Ices, and Vce(sat) at second measurement temperature | Specify Vce(sat) at second measurement temperature plus the energy gap, EG
Default value

None - Simulate at parameter measurement temperature
Program usage name

T_parameterization
Evaluatable

No

# Mobility temperature exponent, BEX — temperature index of the degree of mobility

Details

Temperature coefficient of mobility. For most devices, you can use the default value. If schedules are available At different temperatures, use them to fine tune .

Dependencies

To use this parameter, set for the parameter I-V characteristics defined by meaning Fundamental nonlinear equations, and in the parameter group Temperature Dependence set for the parameter Parameterization meaning Specify Ices, and Vce(sat) at second measurement temperature or Specify Vce(sat) at second measurement temperature plus the energy gap, EG.

Default value

-1.5
Program usage name

BEX
Evaluatable

Yes