Ideal Semiconductor Switch

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The ideal solid-state controlled switch.

blockType: AcausalElectricPowerSystems.Semiconductors.Ideal.SemiconductorSwitch

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/Physical Modeling/Electrical/Semiconductors & Converters/Ideal Semiconductor Switch

Description

The Ideal Semiconductor Switch block is an ideal solid-state controlled switch that uses an external signal and phase current values to break an electrical circuit.

The figure below shows a typical volt-ampere characteristic of an ideal semiconductor switch:

ideal semiconductor switch 1 1

If the voltage across the gate-cathode circuit exceeds the threshold voltage set in the parameters Threshold voltage, Vth, the ideal semiconductor switch is in the on state. Otherwise, the switch is in the off state.

In the on state (passing current in the forward direction), the anode-cathode circuit of the switch behaves like a linear resistor with a resistance of On-state resistance.

In the off state, the anode-cathode circuit of the switch behaves as a linear resistor with low conductivity Off-state conductance.

Using the parameters of the section Integral Diode, a protection diode (suppressor) can be switched on. The suppressor protects the semiconductor switch by providing a conductive path for reverse current. An inductive load can create a large reverse voltage spike when the semiconductor switch suddenly cuts off the voltage supply to the load.

The table shows the recommended values for the parameter Integral protection diode depending on the intended purpose.

Purpose

Value to select

Block behaviour

Simulation speed priority.

Diode with no dynamics

The block includes an integral copy of the block Diode. Use the parameters Integral Diode. to set the parameters of the internal block Diode.

Precise specification of charge dynamics in reverse mode.

Diode with charge dynamics

The block includes an integral copy of the block dynamic model Diode. Use the parameters Integral Diode to set the parameters of the internal block Diode.

Ports

Conserving

# a — anode contact
electricity

Details

An electrical port associated with the switch anode contact.

Program usage name

anode

# k — cathode contact
electricity

Details

An electrical port associated with the cathode contact of a switch.

Program usage name

cathode

# g — gate contact
electricity

Details

An electrical port associated with a switch gate contact.

Dependencies

To use this port, set the parameters Gate-control port to Electrical control port.

Program usage name

control_pin

Input

# g — gate contact
scalar

Details

The control signal port associated with the switch gate.

Dependencies

To use this port, set the Gate-control port parameters to Signal control port.

Data types	`Float64`.
Complex numbers support	No

Parameters

Main

# Gate-control port — defines the control port: scalar or electrical
Signal control port | Electrical control port

Details

Scalar or electrical control port of the switch gate control.

Values	`Signal control port` \| `Electrical control port`
Default value	`Signal control port`
Program usage name	`control_type`
Evaluatable	No

# On-state resistance — on-resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Resistance between anode and cathode in the switched-on state.

Units	`Ohm` \| `GOhm` \| `MOhm` \| `kOhm` \| `mOhm`
Default value	`0.001 Ohm`
Program usage name	`R_on`
Evaluatable	Yes

# Off-state conductance — off-state conductivity
S | mS | nS | uS | 1/Ohm

Details

Anode-to-cathode conductivity in the off state. The value must be less than , where is the resistance value in the on state.

Units	`S` \| `mS` \| `nS` \| `uS` \| `1/Ohm`
Default value	`1e-06 1/Ohm`
Program usage name	`G_off`
Evaluatable	Yes

# Threshold voltage, Vth — threshold voltage
V | MV | kV | mV

Details

The threshold voltage for the gate-cathode circuit. The switch turns ON when the gate-cathode circuit voltage exceeds this value.

Units	`V` \| `MV` \| `kV` \| `mV`
Default value	`0.5 V`
Program usage name	`V_threshold`
Evaluatable	Yes

Integral Diode

# Integral protection diode — internal protection diode (suppressor)
External Diode | Diode with no dynamics | Diode with charge dynamics

Details

Specify whether the unit includes a protection diode (suppressor). By default, the value is used. External Diode.

If the internal protection diode is to be enabled, two options are available:

Diode with no dynamics.
Diode with charge dynamics.

Values	`External Diode` \| `Diode with no dynamics` \| `Diode with charge dynamics`
Default value	`External Diode`
Program usage name	`integral_protection_diode`
Evaluatable	No

# Forward voltage — forward voltage
V | MV | kV | mV

Details

The minimum voltage required by the + and - ports of the block to make the gradient of the diode’s volt-ampere characteristic equal to , where is the resistance value at the switch on.

Dependencies

To use this parameter, set the parameters Integral protection diode to Diode with no dynamics or Diode with charge dynamics.

Units	`V` \| `MV` \| `kV` \| `mV`
Default value	`0.8 V`
Program usage name	`V_f_diode`
Evaluatable	Yes

# On resistance — forward resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Resistance of the diode in the open state when the voltage is higher than the value set by the parameters Forward voltage.

Dependencies

To use this parameter, set the Integral protection diode parameters to the value of Diode with no dynamics or Diode with charge dynamics.

Units	`Ohm` \| `GOhm` \| `MOhm` \| `kOhm` \| `mOhm`
Default value	`0.001 Ohm`
Program usage name	`R_on_diode`
Evaluatable	Yes

# Off conductance — closed conductivity
S | mS | nS | uS | 1/Ohm

Details

Conductivity of the diode when switched back on.

Dependencies

To use this parameter, set the parameters Integral protection diode to the value of Diode with no dynamics or Diode with charge dynamics.

Units	`S` \| `mS` \| `nS` \| `uS` \| `1/Ohm`
Default value	`1e-05 1/Ohm`
Program usage name	`G_off_diode`
Evaluatable	Yes

# Junction capacitance — junction capacitance
F | mF | nF | pF | uF

Details

The value of the capacitance inherent in the depletion zone transition, acting as a dielectric and separating the anode and cathode junctions.

Dependencies

To use this parameter, set the parameters Integral protection diode to . Diode with charge dynamics.

Units	`F` \| `mF` \| `nF` \| `pF` \| `uF`
Default value	`5e-08 F`
Program usage name	`C_diode`
Evaluatable	Yes

# Peak reverse current, iRM — peak reverse current
A | MA | kA | mA | nA | pA | uA

Details

Peak reverse current measured by an external test circuit. This value must be less than zero.

Dependencies

To use this parameter, set the parameter Integral protection diode to . Diode with charge dynamics.

Units	`A` \| `MA` \| `kA` \| `mA` \| `nA` \| `pA` \| `uA`
Default value	`-235.0 A`
Program usage name	`i_rm_diode`
Evaluatable	Yes

# Initial forward current when measuring iRM — initial direct current during iRM measurement
A | MA | kA | mA | nA | pA | uA

Details

Initial forward current (at the initial switch-on time) during peak reverse current measurement. This value must be greater than zero.

Dependencies

To use this parameter, set the parameter Integral protection diode to zero. Diode with charge dynamics.

Units	`A` \| `MA` \| `kA` \| `mA` \| `nA` \| `pA` \| `uA`
Default value	`300.0 A`
Program usage name	`i_f_diode`
Evaluatable	Yes

# Rate of change of current when measuring iRM — rate of change of current during iRM measurement
A/s | A/us

Details

The rate of change of current during peak reverse current measurement. This value must be less than zero.

Dependencies

To use this parameter, set the parameter Integral protection diode to zero. Diode with charge dynamics.

Units	`A/s` \| `A/us`
Default value	`-50.0 A/us`
Program usage name	`diode_current_change_rate`
Evaluatable	Yes

# Reverse recovery time parametrization — method for determining the reverse recovery time
Specify stretch factor | Specify reverse recovery time directly | Specify reverse recovery charge

Details

Specifies the method for setting the reverse recovery time in the block.

When the option Specify stretch factor or Specify reverse recovery charge specifies the value used by the block to calculate the reverse recovery time.

Dependencies

To use this parameter, set the Integral protection diode parameters to Diode with charge dynamics.

Values	`Specify stretch factor` \| `Specify reverse recovery time directly` \| `Specify reverse recovery charge`
Default value	`Specify stretch factor`
Program usage name	`t_rr_diode_parameterization`
Evaluatable	No

# Reverse recovery time stretch factor — back recovery time stretch factor

Details

The value that the block uses to calculate Reverse recovery time trr. This value must be greater than 1. Specifying the stretch factor is a simpler way of parameterising the reverse recovery time than specifying the reverse recovery charge. The larger the value of the stretch factor, the longer it takes for the reverse recovery current to dissipate.

Dependencies

To use this parameter, set the parameters Integral protection diode to Diode with charge dynamics`and set the parameters Reverse recovery time parametrization to `Specify stretch factor.

Default value	`3.0`
Program usage name	`t_rr_factor_diode`
Evaluatable	Yes

# Reverse recovery time trr — recovery time
d | s | hr | ms | ns | us | min

Details

The amount of time it takes for a diode to switch off when the voltage across it reverses polarity from forward bias to reverse bias.

The interval between when the current initially crosses zero (when the diode switches off) and when the current drops to less than 10% of the peak current. The value of the parameter Reverse recovery time trr must be greater than the value of the parameter Peak reverse current, iRM, divided by the value of the parameter Rate of change of current when measuring, iRM.

Dependencies

To use this parameter, set Integral protection diode to the value of the parameter divided by the value of the parameter Rate of change of current when measuring, iRM. Diode with charge dynamics`and set the Reverse recovery time parametrization parameters to the value of Rate of change of current when measuring, iRM. `Specify reverse recovery time directly.

Units	`d` \| `s` \| `hr` \| `ms` \| `ns` \| `us` \| `min`
Default value	`15.0 us`
Program usage name	`t_rr_diode`
Evaluatable	Yes

# Reverse recovery charge Qrr — reverse recovery charge
C | Ah | mC | nC | uC | MAh | kAh | mAh | s*uA

Details

The value the block uses to calculate Reverse recovery time trr. Use this parameter if the block parameters specify the reverse recovery charge value instead of the reverse recovery time value as the type of reverse recovery time definition.

The reverse recovery charge is the total charge that continues to dissipate after the diode is switched off. The value must be less than , where:

- the value specified for the parameter Peak reverse current, iRM.
- value specified for the parameter Rate of change of current when measuring iRM.

Dependencies

To use this parameter, set the Integral protection diode parameter to the value specified for . Diode with charge dynamics`and set the Reverse recovery time parametrization parameters to `Specify reverse recovery charge.

Units	`C` \| `Ah` \| `mC` \| `nC` \| `uC` \| `MAh` \| `kAh` \| `mAh` \| `s*uA`
Default value	`1500.0 s*uA`
Program usage name	`Q_rr_diode`
Evaluatable	Yes