Converter (Three-Phase)
Controller-controlled bidirectional three-phase AC/DC converter.
Description
Block Converter (Three-Phase) simulates a six-pulse three-phase controlled converter consisting of three bridge arms. Each bridge arm consists of two switching devices. The converter circuit connects a three-phase AC network to a DC network.
Each component in the three-arm circuit represents the same switching device, which is defined in parameters Switching device. The switching devices that can be defined are implementations of blocks from the library Semiconductors & Converters:
-
GTO
- latched thyristor. For information on the volt-ampere characteristic of the device, see GTO. -
Ideal Semiconductor Switch
- Ideal solid-state controlled switch. For information on the volt-ampere characteristic of the device, refer to Ideal Semiconductor Switch. -
IGBT
- Insulated gate bipolar transistor. For information on the volt-ampere characterisation of the device, see IGBT (Ideal, Switching). -
MOSFET
- n-channel MOSFET for switching circuits. For information on the volt-ampere characteristic of the device, see MOSFET (Ideal, Switching). -
Thyristor
- piecewise linear thyristor. For information on the volt-ampere characteristic of the device, see Thyristor (Piecewise Linear). -
Averaged Switch
- A solid-state switch with an antiparallel diode. The control signal port G takes values in the interval[0, 1]
. When G is0
or1
, the averaged switch is fully open or fully closed, respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an anti-parallel diode. When G is between0
and1
, the averaging switch is partially open. You can average the pulse width modulation (PWM) signal over a certain period. You can then downsample the model and use modulating waveforms instead of PWM signals.
This figure shows an equivalent circuit for an inverter with fully controlled switching devices (e.g. IGBT, GTO):
Control the gate ports of six switching devices via input to the G block port Converter (Three-Phase):
-
Multiplex all six gate signals into a single vector using block Six-Pulse Gate Multiplexer.
-
Connect the output of the Six-Pulse Gate Multiplexer block to the block Converter (Three-Phase) through the G port.
Using the settings *Integral Diodes*you can switch on the internal protection diode. The internal diode protects the unit by providing a conduction path for reverse current that occurs when the unit abruptly cuts off the voltage supply to an inductive load.
Set the value for the parameters Model dynamics depending on the purpose.
Purpose | Value for selection | Internal protection diode | |
---|---|---|---|
Do not enable protection. |
|
Not used |
|
Enable protection. |
Prioritise the simulation speed. |
|
Block Diode (Advanced). |
Priority of modelling accuracy - accurate indication of charge dynamics in reverse mode. |
|
Dynamic block model Diode (Advanced). |
If the parameters Switching device is set to Averaged Switch , the unit will automatically model the protection diodes without dynamics, the parameter Model dynamics will not be visible, and the protection diode parameters will correspond to the model Diode with no dynamics .
|
A snubber circuit for each switching device can be included in the block. The snubber circuits contain a resistor and a capacitor connected in series. They protect the switching devices from high voltages generated by inductive loads when the unit disconnects the voltage supply to the load. In addition, the snubber circuits prevent excessive rate of change of current when the switching device is switched on.
Ports
Conserving
#
G
—
shutter
electricity
Details
Input port associated with the gate terminals of the switching devices. Connect this port to the unit Six-Pulse Gate Multiplexer.
Program usage name |
|
#
~
—
three-phase port
electricity
Details
Composite three-phase port.
Program usage name |
|
#
+
—
positive terminal
electricity
Details
A port associated with the positive DC terminal.
Program usage name |
|
#
-
—
negative terminal
electricity
Details
Port associated with the negative DC terminal.
Program usage name |
|
Parameters
Main
#
Switching device —
switching device
GTO
| Ideal Semiconductor Switch
| IGBT
| MOSFET
| Thyristor
| Averaged Switch
Details
Switching device of the inverter:
-
GTO
- lockable thyristor GTO. -
Ideal Semiconductor Switch
- ideal semiconductor controlled switch Ideal Semiconductor Switch. -
IGBT
- insulated gate bipolar transistor IGBT (Ideal, Switching). -
MOSFET
- n-channel MOSFET for switching circuits MOSFET (Ideal, Switching). -
Thyristor
- piecewise linear thyristor Thyristor (Piecewise Linear). -
Averaged Switch
- semiconductor switch with antiparallel diode. The switch behaves similarly to the block Ideal Semiconductor Switch with an antiparallel diode.
Values |
|
Default value |
|
Program usage name |
|
Evaluatable |
No |
# Integer for piecewise constant approximation of gate input (0 for disabled) — integer mode for FPGA usage
Details
An integer used to perform a piecewise constant approximation of the gate input for FPGA deployment.
Dependencies
To use this parameter, set the parameters to Switching device value Averaged Switch
.
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
Switching Devices
#
Forward voltage —
forward voltage
V
| MV
| kV
| mV
Details
Minimum voltage at the block ports + and - (cathode and anode for GTO
и Thyristor
, or emitter and collector for IGBT
) necessary for the slope of the volt-ampere characteristic to be equal to , where is the value of the parameters On-state resistance.
Dependencies
To use this parameter, set parameter Switching device value GTO
, IGBT
or Thyristor
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
On-state resistance —
on-resistance
Ohm
| GOhm
| MOhm
| kOhm
| mOhm
Details
Resistance between ports + and - (cathode-anode for Ideal Semiconductor Switch
, GTO
, Thyristor
и Averaged Switch
, or emitter-collector for IGBT
) when the unit is switched on.
Dependencies
To use this parameter, set parameter Switching device value Ideal Semiconductor Switch
, GTO
, IGBT
, Thyristor
or Averaged Switch
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Drain-source on resistance, R_DS(on) —
drain-to-source resistance
Ohm
| GOhm
| MOhm
| kOhm
| mOhm
Details
The resistance between the + and - (drain-to-drain) ports of the unit when the unit is switched on.
Dependencies
To use this parameter, set parameters Switching device value MOSFET
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Off-state conductance —
off-state conductivity
S
| mS
| nS
| uS
| 1/Ohm
Details
Conductivity between the + and - block ports (cathode-anode for Ideal Semiconductor Switch
, GTO
, Thyristor
, emitter-collector for IGBT
, or drain-source for MOSFET
) in the off state. The value must be less than , where is the resistance value in the on state On-state resistance.
Dependencies
To use this parameter, set parameter Switching device value GTO
, Ideal Semiconductor Switch
, IGBT
, MOSFET
or Thyristor
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Threshold voltage —
threshold voltage
V
| MV
| kV
| mV
Details
Threshold voltage between the block ports G (gate) and + (cathode for the Ideal Semiconductor Switch
, emitter for IGBT
, or source for MOSFET
). The device turns on when the voltage between the G and + ports exceeds this value.
Dependencies
To use this parameter, set the parameters to Switching device value Ideal Semiconductor Switch
, IGBT
or MOSFET
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Gate trigger voltage —
gate voltage
V
| MV
| kV
| mV
Details
The threshold voltage between the G (gate) and + (cathode) ports. The device turns on when the voltage between the G and + ports exceeds this value.
Dependencies
To use this parameter, set the parameters to Switching device value GTO
or Thyristor
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Gate turn-off voltage —
closing control voltage
V
| MV
| kV
| mV
Details
The threshold voltage between the G (gate) and + (cathode) block ports. The device turns off when the voltage between the G block ports and + is below this value.
Dependencies
To use this parameter, set the parameters to Switching device value GTO
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Holding current —
holding current
A
| MA
| kA
| mA
| nA
| pA
| uA
Details
Current threshold value. The device remains switched on if the current exceeds this value, even if the voltage between the G (gate) and + (cathode) block ports falls below the release control voltage.
Dependencies
To use this parameter, set parameter Switching device value GTO
or Thyristor
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
Integral Diodes
#
Model dynamics —
internal protection diode (suppressor)
None
| Diode with no dynamics
| Diode with charge dynamics
Details
Specify whether the unit includes a protection diode (suppressor). By default, the value is used. None
.
If the internal protection diode is to be enabled, two options are available:
-
Diode with no dynamics
. -
Diode with charge dynamics
.
Dependencies
To use this parameter, set parameter Switching device value GTO
, Ideal Semiconductor Switch
, IGBT
, MOSFET
or Thyristor
.
Values |
|
Default value |
|
Program usage name |
|
Evaluatable |
No |
#
Forward voltage —
forward voltage
V
| MV
| kV
| mV
Details
Minimum voltage on the ports of the block + and -, necessary for the angle of slope of the diode volt-ampere characteristic to be equal to , where is the value of the parameters On-state resistance.
Dependencies
To use this parameter, set the parameters to Model dynamics value Diode with no dynamics
or Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
On resistance —
forward resistance
Ohm
| GOhm
| MOhm
| kOhm
| mOhm
Details
Diode resistance in the open state when the voltage is higher than the value set by the parameters Forward voltage.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with no dynamics
or Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Off conductance —
closed conductivity
S
| mS
| nS
| uS
| 1/Ohm
Details
Conductivity of the diode when switched back on.
Dependencies
To use this parameter, set the parameters to Model dynamics value Diode with no dynamics
or Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Junction capacitance —
junction capacitance
F
| mF
| nF
| pF
| uF
Details
The value of the capacitance inherent in the depletion zone transition, acting as a dielectric and separating the anode and cathode junctions.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Peak reverse current, iRM —
peak reverse current
A
| MA
| kA
| mA
| nA
| pA
| uA
Details
Peak reverse current measured by an external test circuit. This value must be less than zero.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Initial forward current when measuring iRM —
initial direct current during iRM measurement
A
| MA
| kA
| mA
| nA
| pA
| uA
Details
Initial forward current (at the initial switch-on time) during peak reverse current measurement. This value must be greater than zero.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Rate of change of current when measuring iRM —
rate of change of current during iRM measurement
A/s
| A/us
Details
The rate of change of current during peak reverse current measurement. This value must be less than zero.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with charge dynamics
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Reverse recovery time parameterization —
type of determining the reverse recovery time
Specify stretch factor
| Specify reverse recovery time directly
| Specify reverse recovery charge
Details
When selecting the option Specify stretch factor
or Specify reverse recovery charge
specifies the value used by the block to calculate the reverse recovery time.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with charge dynamics
.
Values |
|
Default value |
|
Program usage name |
|
Evaluatable |
No |
# Reverse recovery time stretch factor — back recovery time stretch factor
Details
The value that the block uses to calculate Reverse recovery time, trr. This value must be greater than 1
. Specifying the stretch factor is a simpler way of parameterising the reverse recovery time than specifying the reverse recovery charge. The larger the value of the stretch factor, the longer it takes for the reverse recovery current to dissipate.
Dependencies
To use this parameter, set the parameter Model dynamics value Diode with charge dynamics`and the Reverse recovery time parametrization parameters set to Reverse recovery time parametrization `Specify stretch factor
.
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Reverse recovery time, trr —
recovery time
d
| s
| hr
| ms
| ns
| us
| min
Details
The amount of time it takes for a diode to switch off when the voltage across it reverses polarity from forward bias to reverse bias.
The interval between when the current initially crosses zero (when the diode switches off) and when the current drops to less than 10% of the peak current. The value of the parameters Reverse recovery time, trr must be greater than the value of parameters Peak reverse current, iRM*divided by the value of the parameter *Rate of change of current when measuring, iRM.
Dependencies
To use this parameter, set the parameters to Model dynamics value Diode with charge dynamics`and the Reverse recovery time parametrization parameters to the Reverse recovery time parametrization value `Specify reverse recovery time directly
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Reverse recovery charge, Qrr —
reverse recovery charge
C
| Ah
| mC
| nC
| uC
| MAh
| kAh
| mAh
| s*uA
Details
The value that the block uses to calculate Reverse recovery time, trr. Use this parameter if the block parameters specify a reverse recovery charge value instead of a reverse recovery time value as the type of reverse recovery time definition.
The reverse recovery charge is the total charge that continues to dissipate after the diode is switched off. The value must be less than , where:
-
- is the value specified for the parameters Peak reverse current, iRM;
-
- the value specified for the parameters Rate of change of current when measuring iRM.
Dependencies
To use this parameter, set parameter Model dynamics value Diode with charge dynamics`and the Reverse recovery time parametrization parameters to the Reverse recovery time parametrization value `Specify reverse recovery charge
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
Snubbers
#
Snubber —
snubber model
None
| RC snubber
Details
Switching device model with noise suppressor.
Values |
|
Default value |
|
Program usage name |
|
Evaluatable |
No |
#
Snubber capacitance —
snubber capacity
F
| mF
| nF
| pF
| uF
Details
Snubber capacity.
Dependencies
To use this parameter, set parameter Snubber value RC snubber
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |
#
Snubber resistance —
snubber resistance
Ohm
| GOhm
| MOhm
| kOhm
| mOhm
Details
Snubber resistance.
Dependencies
To use this parameter, set parameter Snubber value RC snubber
.
Units |
|
Default value |
|
Program usage name |
|
Evaluatable |
Yes |