Converter (Three-Phase)

Controller-controlled bidirectional three-phase AC/DC converter.

converter three phase

Description

The Converter (Three-Phase) unit simulates a six-pulse three-phase controlled converter consisting of three bridge arms. Each bridge arm consists of two switching devices. The converter circuit connects a three-phase AC network to a DC network.

Each component in the three-lead circuit is the same switching device, which is defined in the Switching device parameter. The switching devices that can be specified are implementations of blocks from the Switches and Converters library:

Ideal semiconductor switch - Ideal semiconductor controlled switch. For information on the volt-ampere characteristic of the device, see Ideal Semiconductor Switch.
MOSFET is an n-channel MOSFET for switching circuits. For information on the volt-ampere characteristic of the device, refer to MOSFET (Ideal, Switching).

This figure shows the equivalent circuit for an inverter with fully controlled switching devices:

converter three phase 1

Control the gate ports of six switching devices via the G port input of the Converter (Three-Phase) unit:

Multiplex all six gate signals into a single vector using block Six-Pulse Gate Multiplexer.
Connect the output of the Six-Pulse Gate Multiplexer block to the Converter (Three-Phase) block via the G port.

Using the Integral Diode settings, an internal protection diode can be enabled. The internal diode protects the unit by providing a conduction path for reverse current that occurs when the unit abruptly cuts off the voltage supply to an inductive load.

Set the Integral protection diode parameter depending on the purpose.

Purpose Value to select Integral protection diode

Purpose	Value to select	Integral protection diode
Do not enable protection.	`None`.	Not used
Enable protection.	Simulation speed priority.	`Diode with no dynamics`.	Block Diode (Advanced).
Simulation accuracy priority - accurate indication of charge dynamics in reverse mode.	`Diode with charge dynamics`.	Dynamic block model Diode (Advanced).

Do not enable protection.

None.

Not used

Enable protection.

Simulation speed priority.

Diode with no dynamics.

Block Diode (Advanced).

Simulation accuracy priority - accurate indication of charge dynamics in reverse mode.

Diode with charge dynamics.

Dynamic block model Diode (Advanced).

A snubber circuit for each switching device can be included in the block. The snubber circuits contain a resistor and a capacitor connected in series. They protect the switching devices from high voltages generated by inductive loads when the unit disconnects the voltage supply to the load. In addition, the snubber circuits prevent excessive rate of change of current when the switching device is switched on.

Ports

Conserving

# G — shutter
electricity

Details

Input port associated with the gate terminals of the switching devices. Connect this port to the unit Six-Pulse Gate Multiplexer.

Program usage name

gate_port

# ~ — three-phase port
electricity

Details

Composite three-phase port.

Program usage name

port

# + — positive terminal
electricity

Details

A port associated with the positive DC terminal.

Program usage name

p

# - — negative terminal
electricity

Details

Port associated with the negative DC terminal.

Program usage name

n

Parameters

Main

Details

Switching device of the inverter:

Ideal semiconductor switch - ideal semiconductor controlled switch Ideal Semiconductor Switch.
MOSFET - n-channel MOSFET for switching circuits MOSFET (Ideal, Switching).

Values	`GTO` \| `Ideal Semiconductor Switch` \| `IGBT` \| `MOSFET` \| `Thyristor` \| `Averaged Switch`
Default value	`Ideal Semiconductor Switch`
Program usage name	`switching_device_type`
Evaluatable	No

# Integer for piecewise constant approximation of gate input (0 for disabled) — integer mode for FPGA usage

Details

An integer used to perform a piecewise constant approximation of the gate input for FPGA deployment.

Default value	`0.0`
Program usage name	`K`
Evaluatable	Yes

Switching Devices

# Forward voltage — forward voltage
V | MV | kV | mV

Details

The minimum voltage on the + and - block ports required for the diode’s volt-ampere characteristic slope to be equal to , where is the value of the On-state resistance parameters.

Dependencies

To use this parameter, set the Switching device parameters to GTO.

Values	`V` \| `MV` \| `kV` \| `mV`
Default value	`0.8 V`
Program usage name	`V_f`
Evaluatable	Yes

# On-state resistance — on-resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Resistance between anode and cathode when the device is switched on.

Dependencies

To use this parameter, set the Switching device parameters to Ideal Semiconductor Switch.

Values	`Ohm` \| `GOhm` \| `MOhm` \| `kOhm` \| `mOhm`
Default value	`0.001 Ohm`
Program usage name	`R_on`
Evaluatable	Yes

# Drain-source on resistance, R_DS(on) — drain-to-source resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

The drain-to-source resistance when the device is switched on.

Dependencies

To use this parameter, set the Switching device parameters to MOSFET.

Values	`Ohm` \| `GOhm` \| `MOhm` \| `kOhm` \| `mOhm`
Default value	`0.001 Ohm`
Program usage name	`R_ds`
Evaluatable	Yes

# Off-state conductance — off-state conductivity
S | mS | nS | uS | 1/Ohm

Details

Anode-to-cathode conductivity in the off-state. The value must be less than , where is the value of On-state resistance.

Dependencies

To use this parameter, set the Switching device parameters to Ideal Semiconductor Switch or MOSFET.

Values	`S` \| `mS` \| `nS` \| `uS` \| `1/Ohm`
Default value	`1e-06 1/Ohm`
Program usage name	`G_off`
Evaluatable	Yes

# Threshold voltage — threshold voltage
V | MV | kV | mV

Details

Gate-to-cathode threshold voltage. The device switches on when the gate-cathode voltage exceeds this value.

Dependencies

To use this parameter, set the Switching device parameters to Ideal Semiconductor Switch or MOSFET.

Values	`V` \| `MV` \| `kV` \| `mV`
Default value	`6.0 V`
Program usage name	`V_threshold`
Evaluatable	Yes

# Gate trigger voltage — gate voltage
V | MV | kV | mV

Details

The gate-cathode threshold voltage. The device switches on when the gate-cathode voltage exceeds this value.

Dependencies

To use this parameter, set the Switching device parameters to GTO.

Values	`V` \| `MV` \| `kV` \| `mV`
Default value	`1.0 V`
Program usage name	`V_GT`
Evaluatable	Yes

# Gate turn-off voltage — closing control voltage
V | MV | kV | mV

Details

Gate-cathode threshold voltage. The device switches off when the gate-cathode voltage is below this value.

Dependencies

To use this parameter, set the Switching device parameters to GTO.

Values	`V` \| `MV` \| `kV` \| `mV`
Default value	`-1.0 V`
Program usage name	`V_GT_off`
Evaluatable	Yes

# Holding current — holding current
A | MA | kA | mA | nA | pA | uA

Details

Current threshold value. The device remains on if the current exceeds this value, even if the gate-cathode voltage drops below the open-loop control voltage.

Dependencies

To use this parameter, set the Switching device parameters to GTO.

Values	`A` \| `MA` \| `kA` \| `mA` \| `nA` \| `pA` \| `uA`
Default value	`1.0 A`
Program usage name	`I_H`
Evaluatable	Yes

Integral Diodes

# Model dynamics — internal protection diode (suppressor)
None | Diode with no dynamics | Diode with charge dynamics

Details

Specify whether the unit enables the protection diode (suppressor). By default, `None' is used.

If the internal protection diode is to be enabled, two options are available:

Diode with no dynamics.
`Diode with charge dynamics'.

Values	`None` \| `Diode with no dynamics` \| `Diode with charge dynamics`
Default value	`None`
Program usage name	`protection_diode_parameterization`
Evaluatable	No

# Forward voltage — forward voltage
V | MV | kV | mV

Details

The minimum voltage on the + and - block ports required for the diode’s volt-ampere characteristic slope to be equal to , where is the value of the On-state resistance parameters.

Dependencies

To use this parameter, set the Integral protection diode parameters to Diode with no dynamics or Diode with charge dynamics.

Values	`V` \| `MV` \| `kV` \| `mV`
Default value	`0.8 V`
Program usage name	`V_f_diode`
Evaluatable	Yes

# On resistance — forward resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

The resistance of the diode in the open state when the voltage is higher than the value set by the Forward voltage parameters.

Dependencies

To use this parameter, set the Integral protection diode parameters to Diode with no dynamics or Diode with charge dynamics.

Values	`Ohm` \| `GOhm` \| `MOhm` \| `kOhm` \| `mOhm`
Default value	`0.001 Ohm`
Program usage name	`R_on_diode`
Evaluatable	Yes

# Off conductance — closed conductivity
S | mS | nS | uS | 1/Ohm

Details

Conductivity of the diode when switched back on.

Dependencies

To use this parameter, set the Integral protection diode parameters to Diode with no dynamics or Diode with charge dynamics.

Values	`S` \| `mS` \| `nS` \| `uS` \| `1/Ohm`
Default value	`1e-05 1/Ohm`
Program usage name	`G_off_diode`
Evaluatable	Yes

# Junction capacitance — junction capacitance
F | mF | nF | pF | uF

Details

The value of the capacitance inherent in the depletion zone transition, acting as a dielectric and separating the anode and cathode junctions.

Dependencies

To use this parameter, set the Integral protection diode parameters to `Diode with charge dynamics'.

Values	`F` \| `mF` \| `nF` \| `pF` \| `uF`
Default value	`50.0 nF`
Program usage name	`C_diode`
Evaluatable	Yes

# Peak reverse current, iRM — peak reverse current
A | MA | kA | mA | nA | pA | uA

Details

Peak reverse current measured by an external test circuit. This value must be less than zero. The value by default is `-235A.

Dependencies

To use this parameter, set the Integral protection diode parameters to `Diode with charge dynamics'.

Values	`A` \| `MA` \| `kA` \| `mA` \| `nA` \| `pA` \| `uA`
Default value	`-235.0 A`
Program usage name	`i_rm_diode`
Evaluatable	Yes

# Initial forward current when measuring iRM — initial direct current during iRM measurement
A | MA | kA | mA | nA | pA | uA

Details

Initial forward current (at the initial switch-on time) during peak reverse current measurement. This value must be greater than zero.

Dependencies

To use this parameter, set the Integral protection diode parameters to Diode with charge dynamics.

Values	`A` \| `MA` \| `kA` \| `mA` \| `nA` \| `pA` \| `uA`
Default value	`300.0 A`
Program usage name	`i_f_diode`
Evaluatable	Yes

# Rate of change of current when measuring iRM — rate of change of current during iRM measurement
A/s | A/us

Details

The rate of change of current during peak reverse current measurement. This value must be less than zero.

Dependencies

To use this parameter, set the Integral protection diode parameters to Diode with charge dynamics.

Values	`A/s` \| `A/us`
Default value	`-50.0 A/us`
Program usage name	`diode_current_change_rate`
Evaluatable	Yes

# Reverse recovery time parameterization — type of determining the reverse recovery time
Specify stretch factor | Specify reverse recovery time directly | Specify reverse recovery charge

Details

Selecting Specify stretch factor or Specify reverse recovery charge specifies the value used by the unit to calculate the reverse recovery time.

Dependencies

To use this parameter, set the Integral protection diode parameter to `Diode with charge dynamics'.

Values	`Specify stretch factor` \| `Specify reverse recovery time directly` \| `Specify reverse recovery charge`
Default value	`Specify stretch factor`
Program usage name	`t_rr_diode_parameterization`
Evaluatable	No

# Reverse recovery time stretch factor — back recovery time stretch factor

Details

The value that the block uses to calculate the Reverse recovery time, trr. This value must be greater than 1. Specifying the stretch factor is a simpler way of parameterising the reverse recovery time than specifying the reverse recovery charge. The larger the value of the stretch factor, the longer the time required for the reverse recovery current to dissipate.

Dependencies

To use this parameter, set the Integral protection diode parameter to `Diode with charge dynamics' and the Reverse recovery time parametrization parameter to `Specify stretch factor'.

Default value	`3.0`
Program usage name	`t_rr_factor_diode`
Evaluatable	Yes

# Reverse recovery time, trr — recovery time
d | s | hr | ms | ns | us | min

Details

The amount of time it takes for a diode to switch off when the voltage across it reverses polarity from forward bias to reverse bias.

The interval between when the current initially crosses zero (when the diode switches off) and when the current drops to less than 10% of the peak current. The value of the Reverse recovery time, trr parameter must be greater than the value of the Peak reverse current, iRM parameter divided by the value of the Rate of change of current when measuring, iRM parameter.

Dependencies

To use this parameter, set the Integral protection diode parameter to `Diode with charge dynamics' and the Reverse recovery time parametrization parameter to `Specify reverse recovery time directly'.

Values	`d` \| `s` \| `hr` \| `ms` \| `ns` \| `us` \| `min`
Default value	`15.0 us`
Program usage name	`t_rr_diode`
Evaluatable	Yes

# Reverse recovery charge, Qrr — reverse recovery charge
C | Ah | mC | nC | uC | MAh | kAh | mAh | s*uA

Details

The value the block uses to calculate Reverse recovery time, trr. Use this parameter if the block parameters specify a reverse recovery charge value instead of a reverse recovery time value as the type of reverse recovery time definition.

The reverse recovery charge is the total charge that continues to dissipate after the diode is switched off. The value must be less than , where:

- value specified for the Peak reverse current, iRM parameters;
- value specified for the parameter Rate of change of current when measuring iRM.

Dependencies

Values	`C` \| `Ah` \| `mC` \| `nC` \| `uC` \| `MAh` \| `kAh` \| `mAh` \| `s*uA`
Default value	`1500.0 s*uA`
Program usage name	`Q_rr_diode`
Evaluatable	Yes

Snubbers

# Snubber — snubber model
None | RC snubber

Details

Switching device model with noise suppressor.

Values	`None` \| `RC snubber`
Default value	`None`
Program usage name	`snubber_option`
Evaluatable	No

# Snubber capacitance — snubber capacity
F | mF | nF | pF | uF

Details

Snubber capacity.

Dependencies

To use this parameter, set the Snubber parameters to RC snubber.

Values	`F` \| `mF` \| `nF` \| `pF` \| `uF`
Default value	`1e-07 F`
Program usage name	`C_s`
Evaluatable	Yes

# Snubber resistance — snubber resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Snubber resistance.

Dependencies

To use this parameter, set the Snubber parameters to RC snubber.

Values	`Ohm` \| `GOhm` \| `MOhm` \| `kOhm` \| `mOhm`
Default value	`0.1 Ohm`
Program usage name	`R_s`
Evaluatable	Yes