Engee documentation

Converter (Three-Phase)

Controller-controlled bidirectional three-phase AC/DC converter.

blockType: AcausalElectricPowerSystems.Converters.ThreePhase

converter three phase

Path in the library:

/Physical Modeling/Electrical/Semiconductors & Converters/Converters/Converter (Three-Phase)

Description

The unit Converter (Three-Phase) models a six-pulse three-phase controlled converter consisting of three bridge arms. Each bridge arm consists of two switching devices. The converter circuit connects a three-phase AC network to a DC network.

Each component in the three-arm circuit is the same switching device, which is defined in the parameters Switching device. The switching devices that can be defined are implementations of blocks from the library Semiconductors & Converters:

  • GTO - latched thyristor. For information on the volt-ampere characteristic of the device, see GTO.

  • Ideal Semiconductor Switch - ideal solid-state controlled switch. For information on the volt-ampere characteristic of the device, refer to Ideal Semiconductor Switch.

  • IGBT - Insulated gate bipolar transistor. For information on the volt-ampere characterisation of the device, see IGBT (Ideal, Switching).

  • MOSFET - n-channel MOSFET for switching circuits. For information on the volt-ampere characteristic of the device, see MOSFET (Ideal, Switching).

  • Thyristor - piecewise linear thyristor. For information on the volt-ampere characteristic of the device, see Thyristor (Piecewise Linear).

  • Averaged Switch - A solid-state switch with an antiparallel diode. The control signal port G takes values in the interval [0, 1]. When G is 0 or 1, the averaged switch is fully open or fully closed, respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an anti-parallel diode. When G is between 0 and 1, the averaging switch is partially open. You can average the pulse width modulation (PWM) signal over a certain period. You can then downsample the model and use modulating waveforms instead of PWM signals.

This figure shows an equivalent circuit for an inverter with fully controlled switching devices (e.g. IGBT, GTO):

converter three phase 1

Control the gate ports of the six switching devices via input to the G port of the Converter (Three-Phase) unit :

  1. Multiplex all six gate signals into a single vector using block Six-Pulse Gate Multiplexer.

  2. Connect the output of the Six-Pulse Gate Multiplexer block to the Converter (Three-Phase) block via the G port.

Using the settings of Integral Diodes, you can switch on the internal protection diode. The internal diode protects the unit by providing a conduction path for reverse current that occurs when the unit abruptly cuts off the voltage supply to an inductive load.

Set the value for the parameters Integral protection diode depending on the purpose.

Purpose Selection value Internal protection diode

Do not enable protection.

None.

Not used

Enable protection.

Prioritise the simulation speed.

Diode with no dynamics

Block Diode (Advanced).

Priority of modelling accuracy - accurate indication of charge dynamics in reverse mode.

Diode with charge dynamics

Dynamic block model Diode (Advanced).
If the parameter Switching device is set to Averaged Switch, the block will automatically model the protection diodes without dynamics, the parameter Integral protection diode will not be visible, and the parameters of the protection diode will correspond to the model Diode with no dynamics.

The block can include a snubber circuit for each switching device. Snubber circuits contain a resistor and capacitor connected in series. They protect the switching devices from high voltages generated by inductive loads when the unit disconnects the voltage supply to the load. In addition, the snubber circuits prevent excessive rate of change of current when the switching device is switched on.

Ports

Conserving

# G — shutter
electricity

Details

Input port associated with the gate terminals of the switching devices. Connect this port to the unit Six-Pulse Gate Multiplexer.

Program usage name

gate_port

# ~ — three-phase port
electricity

Details

Composite three-phase port.

Program usage name

port

# + — positive terminal
electricity

Details

A port associated with the positive DC terminal.

Program usage name

p

# - — negative terminal
electricity

Details

Port associated with the negative DC terminal.

Program usage name

n

Parameters

Switching Devices

# Switching device — switching device
GTO | Ideal Semiconductor Switch | IGBT | MOSFET | Thyristor | Averaged Switch

Details

Converter switching device:

Values

GTO | Ideal Semiconductor Switch | IGBT | MOSFET | Thyristor | Averaged Switch
Default value

Ideal Semiconductor Switch
Program usage name

switching_device_type
Evaluatable

No

# Integer for piecewise constant approximation of gate input (0 for disabled) — integer mode for FPGA use

Details

An integer used to perform a piecewise constant approximation of the gate input for FPGA deployment.

Dependencies

To use this parameter, set for the parameter Switching device meaning Averaged Switch.

Default value

0.0
Program usage name

K
Evaluatable

Yes

# Forward voltage — forward voltage
V | uV | mV | kV | MV

Details

Minimum voltage at the ports of the unit + and − (cathode and anode for GTO and Thyristor, or an emitter and collector for IGBT), necessary to ensure that the angle of inclination of the volt-ampere characteristic is equal to , where — parameter value On-state resistance.

Dependencies

To use this parameter, set for the parameter Switching device meaning GTO, IGBT or Thyristor.

Units

V | uV | mV | kV | MV
Default value

0.8 V
Program usage name

V_f
Evaluatable

Yes

# On-state resistance — resistance in the switched-on state
Ohm | mOhm | kOhm | MOhm | GOhm

Details

Resistance between the ports of the unit + and − (cathode-anode for Ideal Semiconductor Switch, GTO, Thyristor and Averaged Switch, or an emitter collector for IGBT) when the device is turned on.

Dependencies

To use this parameter, set for the parameter Switching device meaning Ideal Semiconductor Switch, GTO, IGBT, Thyristor or Averaged Switch.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.001 Ohm
Program usage name

R_on
Evaluatable

Yes

# Drain-source on resistance, R_DS(on) — drain-source resistance
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance between the ports of the unit + and − (drain-source) when the device is switched on.

Dependencies

To use this parameter, set for the parameter Switching device meaning MOSFET.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.001 Ohm
Program usage name

R_ds
Evaluatable

Yes

# Off-state conductance — conductivity in the off state
S | nS | uS | mS | 1/Ohm

Details

Conductivity between the ports of the unit + and − (cathode-anode for Ideal Semiconductor Switch, GTO, Thyristor, the emitter collector for IGBT, or the drain-source for MOSFET) in the off state. The value should be less than , where — the value of the resistance in the switched-on state On-state resistance.

Dependencies

To use this parameter, set for the parameter Switching device meaning GTO, Ideal Semiconductor Switch, IGBT, MOSFET or Thyristor.

Units

S | nS | uS | mS | 1/Ohm
Default value

1e-06 1/Ohm
Program usage name

G_off
Evaluatable

Yes

# Threshold voltage — Threshold voltage
V | uV | mV | kV | MV

Details

Threshold voltage between the ports of the unit G (gate) and * (cathode for `{blockLibraryPP_blockTypesPP_AcausalElectricPowerSystemsBB_PP_ConvertersBB_PP_ThreePhasePP_BasePP_paramsPP_PP_MainPP_switching_device_typePP_optionsPP_IdealSS_SemiconductorSS_Switch}`, the emitter for `{blockLibraryPP_blockTypesPP_AcausalElectricPowerSystemsBB_PP_ConvertersBB_PP_ThreePhasePP_BasePP_paramsPP_PP_MainPP_switching_device_typePP_optionsPP_IGBT}`, or the source for `{blockLibraryPP_blockTypesPP_AcausalElectricPowerSystemsBB_PP_ConvertersBB_PP_ThreePhasePP_BasePP_paramsPP_PP_MainPP_switching_device_typePP_optionsPP_MOSFET}`). The device turns on when the voltage between the ports of the *G* and * block exceeds this value.

Dependencies

To use this parameter, set for the parameter Switching device meaning Ideal Semiconductor Switch, IGBT or MOSFET.

Units

V | uV | mV | kV | MV
Default value

6.0 V
Program usage name

V_threshold
Evaluatable

Yes

# Gate trigger voltage — shutter release voltage
V | uV | mV | kV | MV

Details

The threshold voltage between the ports of the unit is G (gate) and * (cathode). The device turns on when the voltage between the ports of the *G* and * block exceeds this value.

Dependencies

To use this parameter, set for the parameter Switching device meaning GTO or Thyristor.

Units

V | uV | mV | kV | MV
Default value

1.0 V
Program usage name

V_GT
Evaluatable

Yes

# Gate turn-off voltage — locking voltage control
V | uV | mV | kV | MV

Details

The threshold voltage between the ports of the unit is G (gate) and * (cathode). The device turns off when the voltage between the ports of the *G* and * unit is below this value.

Dependencies

To use this parameter, set for the parameter Switching device meaning GTO.

Units

V | uV | mV | kV | MV
Default value

-1.0 V
Program usage name

V_GT_off
Evaluatable

Yes

# Holding current — holding current
A | pA | nA | uA | mA | kA | MA

Details

The current threshold value. The device remains switched on if the current exceeds this value, even if the voltage between the ports of the unit G (gate) and + (cathode) falls below the unlocking control voltage.

Dependencies

To use this parameter, set for the parameter Switching device meaning GTO or Thyristor.

Units

A | pA | nA | uA | mA | kA | MA
Default value

1.0 A
Program usage name

I_H
Evaluatable

Yes

Integral Diodes

# Integral protection diode — internal protective diode (suppressor)
None | Diode with no dynamics | Diode with charge dynamics

Details

Specify whether the unit includes a protective diode (suppressor). The default value is None.

If it is necessary to turn on the internal protective diode, then there are two possible options:

  • Diode with no dynamics.

  • Diode with charge dynamics.

Dependencies

To use this parameter, set for the parameter Switching device meaning GTO, Ideal Semiconductor Switch, IGBT, MOSFET or Thyristor.

Values

None | Diode with no dynamics | Diode with charge dynamics
Default value

None
Program usage name

protection_diode_parameterization
Evaluatable

No

# Forward voltage — forward voltage
V | uV | mV | kV | MV

Details

The minimum voltage at the ports of the block + and − required to ensure that the tilt angle of the volt-ampere characteristic of the diode is equal to , where — parameter value On-state resistance.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with no dynamics or Diode with charge dynamics.

Units

V | uV | mV | kV | MV
Default value

0.8 V
Program usage name

V_f_diode
Evaluatable

Yes

# On resistance — resistance when switched on directly
Ohm | mOhm | kOhm | MOhm | GOhm

Details

The resistance of the diode is in the open state when the voltage is higher than the value set by the parameter Forward voltage.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with no dynamics or Diode with charge dynamics.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.001 Ohm
Program usage name

R_on_diode
Evaluatable

Yes

# Off conductance — closed state conductivity
S | nS | uS | mS | 1/Ohm

Details

The conductivity of the diode when it is switched back on.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with no dynamics or Diode with charge dynamics.

Units

S | nS | uS | mS | 1/Ohm
Default value

1e-05 1/Ohm
Program usage name

G_off_diode
Evaluatable

Yes

# Junction capacitance — transfer capacity
F | pF | nF | uF | mF

Details

The value of the capacitance characteristic of the transition from the depleted zone, acting as a dielectric and separating the connections of the anode and cathode.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics.

Units

F | pF | nF | uF | mF
Default value

50.0 nF
Program usage name

C_diode
Evaluatable

Yes

# Peak reverse current, iRM — peak reverse current
A | pA | nA | uA | mA | kA | MA

Details

The peak return current measured by the external test circuit. This value must be less than zero.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics.

Units

A | pA | nA | uA | mA | kA | MA
Default value

-235.0 A
Program usage name

i_rm_diode
Evaluatable

Yes

# Initial forward current when measuring iRM — initial forward current during iRM measurement
A | pA | nA | uA | mA | kA | MA

Details

The initial forward current (at the initial moment of the switch-on time) when measuring the peak reverse current. This value must be greater than zero.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics.

Units

A | pA | nA | uA | mA | kA | MA
Default value

300.0 A
Program usage name

i_f_diode
Evaluatable

Yes

# Rate of change of current when measuring iRM — the rate of change of current during iRM measurement
A/s | A/us

Details

The rate of change of the current when measuring the peak reverse current. This value must be less than zero.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics.

Units

A/s | A/us
Default value

-50.0 A/us
Program usage name

diode_current_change_rate
Evaluatable

Yes

# Reverse recovery time parameterization — type of reverse recovery time determination
Specify stretch factor | Specify reverse recovery time directly | Specify reverse recovery charge

Details

When selecting an option Specify stretch factor or Specify reverse recovery charge the value that is used by the block to calculate the reverse recovery time is specified.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics.

Values

Specify stretch factor | Specify reverse recovery time directly | Specify reverse recovery charge
Default value

Specify stretch factor
Program usage name

t_rr_diode_parameterization
Evaluatable

No

# Reverse recovery time stretch factor — the stretching coefficient of the reverse recovery time

Details

The value that the block uses for calculation Reverse recovery time, trr. This value should be higher. 1. Specifying the stretching coefficient is an easier way to parameterize the reverse recovery time than specifying the reverse recovery charge. The higher the value of the stretching coefficient, the longer it takes for the reverse recovery current to dissipate.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics, and for the Reverse recovery time parametrization parameter , the value Specify stretch factor.

Default value

3.0
Program usage name

t_rr_factor_diode
Evaluatable

Yes

# Reverse recovery time, trr — reverse recovery time
s | ns | us | ms | min | hr | d

Details

The amount of time it takes for a diode to turn off when the voltage across it reverses from forward bias to reverse.

The interval between the moment of the initial transition of the current through zero (when the diode turns off) and the moment the current drops to less than 10% of the peak current. Parameter Value Reverse recovery time, trr there must be more than the parameter value. Peak reverse current, iRM, divided by the value of the parameter Rate of change of current when measuring, iRM.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics, and for the Reverse recovery time parametrization parameter , the value Specify reverse recovery time directly.

Units

s | ns | us | ms | min | hr | d
Default value

15.0 us
Program usage name

t_rr_diode
Evaluatable

Yes

# Reverse recovery charge, Qrr — reverse recovery charge
C | nC | uC | mC | nA*s | uA*s | mA*s | A*s | mA*hr | A*hr | kA*hr | MA*hr

Details

The value that the block uses for calculation Reverse recovery time, trr. Use this parameter if the reverse recovery charge value is specified in the block parameters as the type of reverse recovery time determination instead of the reverse recovery time value.

The reverse recovery charge is the total charge that continues to dissipate after the diode is turned off. The value must be less than , where:

  • — the value specified for the parameter Peak reverse current, iRM;

  • — the value specified for the parameter Rate of change of current when measuring iRM.

Dependencies

To use this parameter, set for the parameter Integral protection diode meaning Diode with charge dynamics, and for the Reverse recovery time parametrization parameter , the value Specify reverse recovery charge.

Units

C | nC | uC | mC | nA*s | uA*s | mA*s | A*s | mA*hr | A*hr | kA*hr | MA*hr
Default value

1500.0 uA*s
Program usage name

Q_rr_diode
Evaluatable

Yes

Snubbers

# Snubber — the snubber model

Details

A model of a noise-canceling switching device.

Default value

false (switched off)
Program usage name

snubber_option
Evaluatable

No

# Snubber capacitance — snubber capacity
F | pF | nF | uF | mF

Details

Snubber capacity.

Dependencies

To use this option, check the box for the option Snubber.

Units

F | pF | nF | uF | mF
Default value

1e-07 F
Program usage name

C_s
Evaluatable

Yes

# Snubber resistance — snubber resistance
Ohm | mOhm | kOhm | MOhm | GOhm

Details

Snubber resistance.

Dependencies

To use this option, check the box for the option Snubber.

Units

Ohm | mOhm | kOhm | MOhm | GOhm
Default value

0.1 Ohm
Program usage name

R_s
Evaluatable

Yes

Examples