Engee documentation

Converter (Three-Phase)

Controller-controlled bidirectional three-phase AC/DC converter.

blockType: AcausalElectricPowerSystems.Converters.ThreePhase

converter three phase

Path in the library:

/Physical Modeling/Electrical/Semiconductors & Converters/Converters/Converter (Three-Phase)

Description

Block Converter (Three-Phase) simulates a six-pulse three-phase controlled converter consisting of three bridge arms. Each bridge arm consists of two switching devices. The converter circuit connects a three-phase AC network to a DC network.

Each component in the three-arm circuit represents the same switching device, which is defined in parameters Switching device. The switching devices that can be defined are implementations of blocks from the library Semiconductors & Converters:

  • GTO - latched thyristor. For information on the volt-ampere characteristic of the device, see GTO.

  • Ideal Semiconductor Switch - Ideal solid-state controlled switch. For information on the volt-ampere characteristic of the device, refer to Ideal Semiconductor Switch.

  • IGBT - Insulated gate bipolar transistor. For information on the volt-ampere characterisation of the device, see IGBT (Ideal, Switching).

  • MOSFET - n-channel MOSFET for switching circuits. For information on the volt-ampere characteristic of the device, see MOSFET (Ideal, Switching).

  • Thyristor - piecewise linear thyristor. For information on the volt-ampere characteristic of the device, see Thyristor (Piecewise Linear).

  • Averaged Switch - A solid-state switch with an antiparallel diode. The control signal port G takes values in the interval [0, 1]. When G is 0 or 1, the averaged switch is fully open or fully closed, respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an anti-parallel diode. When G is between 0 and 1, the averaging switch is partially open. You can average the pulse width modulation (PWM) signal over a certain period. You can then downsample the model and use modulating waveforms instead of PWM signals.

This figure shows an equivalent circuit for an inverter with fully controlled switching devices (e.g. IGBT, GTO):

converter three phase 1

Control the gate ports of six switching devices via input to the G block port Converter (Three-Phase):

  1. Multiplex all six gate signals into a single vector using block Six-Pulse Gate Multiplexer.

  2. Connect the output of the Six-Pulse Gate Multiplexer block to the block Converter (Three-Phase) through the G port.

Using the settings *Integral Diodes*you can switch on the internal protection diode. The internal diode protects the unit by providing a conduction path for reverse current that occurs when the unit abruptly cuts off the voltage supply to an inductive load.

Set the value for the parameters Model dynamics depending on the purpose.

Purpose Value for selection Internal protection diode

Do not enable protection.

None.

Not used

Enable protection.

Prioritise the simulation speed.

Diode with no dynamics

Block Diode (Advanced).

Priority of modelling accuracy - accurate indication of charge dynamics in reverse mode.

Diode with charge dynamics

Dynamic block model Diode (Advanced).
If the parameters Switching device is set to Averaged Switch, the unit will automatically model the protection diodes without dynamics, the parameter Model dynamics will not be visible, and the protection diode parameters will correspond to the model Diode with no dynamics.

A snubber circuit for each switching device can be included in the block. The snubber circuits contain a resistor and a capacitor connected in series. They protect the switching devices from high voltages generated by inductive loads when the unit disconnects the voltage supply to the load. In addition, the snubber circuits prevent excessive rate of change of current when the switching device is switched on.

Ports

Conserving

# G — shutter
electricity

Details

Input port associated with the gate terminals of the switching devices. Connect this port to the unit Six-Pulse Gate Multiplexer.

Program usage name

gate_port

# ~ — three-phase port
electricity

Details

Composite three-phase port.

Program usage name

port

# + — positive terminal
electricity

Details

A port associated with the positive DC terminal.

Program usage name

p

# - — negative terminal
electricity

Details

Port associated with the negative DC terminal.

Program usage name

n

Parameters

Main

# Switching device — switching device
GTO | Ideal Semiconductor Switch | IGBT | MOSFET | Thyristor | Averaged Switch

Details

Switching device of the inverter:

Values

GTO | Ideal Semiconductor Switch | IGBT | MOSFET | Thyristor | Averaged Switch
Default value

Ideal Semiconductor Switch
Program usage name

switching_device_type
Evaluatable

No

# Integer for piecewise constant approximation of gate input (0 for disabled) — integer mode for FPGA usage

Details

An integer used to perform a piecewise constant approximation of the gate input for FPGA deployment.

Dependencies

To use this parameter, set the parameters to Switching device value Averaged Switch.

Default value

0.0
Program usage name

K
Evaluatable

Yes

Switching Devices

# Forward voltage — forward voltage
V | MV | kV | mV

Details

Minimum voltage at the block ports + and - (cathode and anode for GTO и Thyristor, or emitter and collector for IGBT) necessary for the slope of the volt-ampere characteristic to be equal to , where is the value of the parameters On-state resistance.

Dependencies

To use this parameter, set parameter Switching device value GTO, IGBT or Thyristor.

Units

V | MV | kV | mV
Default value

0.8 V
Program usage name

V_f
Evaluatable

Yes

# On-state resistance — on-resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Resistance between ports + and - (cathode-anode for Ideal Semiconductor Switch, GTO, Thyristor и Averaged Switch, or emitter-collector for IGBT) when the unit is switched on.

Dependencies

To use this parameter, set parameter Switching device value Ideal Semiconductor Switch, GTO, IGBT, Thyristor or Averaged Switch.

Units

Ohm | GOhm | MOhm | kOhm | mOhm
Default value

0.001 Ohm
Program usage name

R_on
Evaluatable

Yes

# Drain-source on resistance, R_DS(on) — drain-to-source resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

The resistance between the + and - (drain-to-drain) ports of the unit when the unit is switched on.

Dependencies

To use this parameter, set parameters Switching device value MOSFET.

Units

Ohm | GOhm | MOhm | kOhm | mOhm
Default value

0.001 Ohm
Program usage name

R_ds
Evaluatable

Yes

# Off-state conductance — off-state conductivity
S | mS | nS | uS | 1/Ohm

Details

Conductivity between the + and - block ports (cathode-anode for Ideal Semiconductor Switch, GTO, Thyristor, emitter-collector for IGBT, or drain-source for MOSFET) in the off state. The value must be less than , where is the resistance value in the on state On-state resistance.

Dependencies

To use this parameter, set parameter Switching device value GTO, Ideal Semiconductor Switch, IGBT, MOSFET or Thyristor.

Units

S | mS | nS | uS | 1/Ohm
Default value

1e-06 1/Ohm
Program usage name

G_off
Evaluatable

Yes

# Threshold voltage — threshold voltage
V | MV | kV | mV

Details

Threshold voltage between the block ports G (gate) and + (cathode for the Ideal Semiconductor Switch, emitter for IGBT, or source for MOSFET). The device turns on when the voltage between the G and + ports exceeds this value.

Dependencies

To use this parameter, set the parameters to Switching device value Ideal Semiconductor Switch, IGBT or MOSFET.

Units

V | MV | kV | mV
Default value

6.0 V
Program usage name

V_threshold
Evaluatable

Yes

# Gate trigger voltage — gate voltage
V | MV | kV | mV

Details

The threshold voltage between the G (gate) and + (cathode) ports. The device turns on when the voltage between the G and + ports exceeds this value.

Dependencies

To use this parameter, set the parameters to Switching device value GTO or Thyristor.

Units

V | MV | kV | mV
Default value

1.0 V
Program usage name

V_GT
Evaluatable

Yes

# Gate turn-off voltage — closing control voltage
V | MV | kV | mV

Details

The threshold voltage between the G (gate) and + (cathode) block ports. The device turns off when the voltage between the G block ports and + is below this value.

Dependencies

To use this parameter, set the parameters to Switching device value GTO.

Units

V | MV | kV | mV
Default value

-1.0 V
Program usage name

V_GT_off
Evaluatable

Yes

# Holding current — holding current
A | MA | kA | mA | nA | pA | uA

Details

Current threshold value. The device remains switched on if the current exceeds this value, even if the voltage between the G (gate) and + (cathode) block ports falls below the release control voltage.

Dependencies

To use this parameter, set parameter Switching device value GTO or Thyristor.

Units

A | MA | kA | mA | nA | pA | uA
Default value

1.0 A
Program usage name

I_H
Evaluatable

Yes

Integral Diodes

# Model dynamics — internal protection diode (suppressor)
None | Diode with no dynamics | Diode with charge dynamics

Details

Specify whether the unit includes a protection diode (suppressor). By default, the value is used. None.

If the internal protection diode is to be enabled, two options are available:

  • Diode with no dynamics.

  • Diode with charge dynamics.

Dependencies

To use this parameter, set parameter Switching device value GTO, Ideal Semiconductor Switch, IGBT, MOSFET or Thyristor.

Values

None | Diode with no dynamics | Diode with charge dynamics
Default value

None
Program usage name

protection_diode_parameterization
Evaluatable

No

# Forward voltage — forward voltage
V | MV | kV | mV

Details

Minimum voltage on the ports of the block + and -, necessary for the angle of slope of the diode volt-ampere characteristic to be equal to , where is the value of the parameters On-state resistance.

Dependencies

To use this parameter, set the parameters to Model dynamics value Diode with no dynamics or Diode with charge dynamics.

Units

V | MV | kV | mV
Default value

0.8 V
Program usage name

V_f_diode
Evaluatable

Yes

# On resistance — forward resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Diode resistance in the open state when the voltage is higher than the value set by the parameters Forward voltage.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with no dynamics or Diode with charge dynamics.

Units

Ohm | GOhm | MOhm | kOhm | mOhm
Default value

0.001 Ohm
Program usage name

R_on_diode
Evaluatable

Yes

# Off conductance — closed conductivity
S | mS | nS | uS | 1/Ohm

Details

Conductivity of the diode when switched back on.

Dependencies

To use this parameter, set the parameters to Model dynamics value Diode with no dynamics or Diode with charge dynamics.

Units

S | mS | nS | uS | 1/Ohm
Default value

1e-05 1/Ohm
Program usage name

G_off_diode
Evaluatable

Yes

# Junction capacitance — junction capacitance
F | mF | nF | pF | uF

Details

The value of the capacitance inherent in the depletion zone transition, acting as a dielectric and separating the anode and cathode junctions.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with charge dynamics.

Units

F | mF | nF | pF | uF
Default value

50.0 nF
Program usage name

C_diode
Evaluatable

Yes

# Peak reverse current, iRM — peak reverse current
A | MA | kA | mA | nA | pA | uA

Details

Peak reverse current measured by an external test circuit. This value must be less than zero.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with charge dynamics.

Units

A | MA | kA | mA | nA | pA | uA
Default value

-235.0 A
Program usage name

i_rm_diode
Evaluatable

Yes

# Initial forward current when measuring iRM — initial direct current during iRM measurement
A | MA | kA | mA | nA | pA | uA

Details

Initial forward current (at the initial switch-on time) during peak reverse current measurement. This value must be greater than zero.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with charge dynamics.

Units

A | MA | kA | mA | nA | pA | uA
Default value

300.0 A
Program usage name

i_f_diode
Evaluatable

Yes

# Rate of change of current when measuring iRM — rate of change of current during iRM measurement
A/s | A/us

Details

The rate of change of current during peak reverse current measurement. This value must be less than zero.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with charge dynamics.

Units

A/s | A/us
Default value

-50.0 A/us
Program usage name

diode_current_change_rate
Evaluatable

Yes

# Reverse recovery time parameterization — type of determining the reverse recovery time
Specify stretch factor | Specify reverse recovery time directly | Specify reverse recovery charge

Details

When selecting the option Specify stretch factor or Specify reverse recovery charge specifies the value used by the block to calculate the reverse recovery time.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with charge dynamics.

Values

Specify stretch factor | Specify reverse recovery time directly | Specify reverse recovery charge
Default value

Specify stretch factor
Program usage name

t_rr_diode_parameterization
Evaluatable

No

# Reverse recovery time stretch factor — back recovery time stretch factor

Details

The value that the block uses to calculate Reverse recovery time, trr. This value must be greater than 1. Specifying the stretch factor is a simpler way of parameterising the reverse recovery time than specifying the reverse recovery charge. The larger the value of the stretch factor, the longer it takes for the reverse recovery current to dissipate.

Dependencies

To use this parameter, set the parameter Model dynamics value Diode with charge dynamics`and the Reverse recovery time parametrization parameters set to Reverse recovery time parametrization `Specify stretch factor.

Default value

3.0
Program usage name

t_rr_factor_diode
Evaluatable

Yes

# Reverse recovery time, trr — recovery time
d | s | hr | ms | ns | us | min

Details

The amount of time it takes for a diode to switch off when the voltage across it reverses polarity from forward bias to reverse bias.

The interval between when the current initially crosses zero (when the diode switches off) and when the current drops to less than 10% of the peak current. The value of the parameters Reverse recovery time, trr must be greater than the value of parameters Peak reverse current, iRM*divided by the value of the parameter *Rate of change of current when measuring, iRM.

Dependencies

To use this parameter, set the parameters to Model dynamics value Diode with charge dynamics`and the Reverse recovery time parametrization parameters to the Reverse recovery time parametrization value `Specify reverse recovery time directly.

Units

d | s | hr | ms | ns | us | min
Default value

15.0 us
Program usage name

t_rr_diode
Evaluatable

Yes

# Reverse recovery charge, Qrr — reverse recovery charge
C | Ah | mC | nC | uC | MAh | kAh | mAh | s*uA

Details

The value that the block uses to calculate Reverse recovery time, trr. Use this parameter if the block parameters specify a reverse recovery charge value instead of a reverse recovery time value as the type of reverse recovery time definition.

The reverse recovery charge is the total charge that continues to dissipate after the diode is switched off. The value must be less than , where:

  • - is the value specified for the parameters Peak reverse current, iRM;

  • - the value specified for the parameters Rate of change of current when measuring iRM.

Dependencies

To use this parameter, set parameter Model dynamics value Diode with charge dynamics`and the Reverse recovery time parametrization parameters to the Reverse recovery time parametrization value `Specify reverse recovery charge.

Units

C | Ah | mC | nC | uC | MAh | kAh | mAh | s*uA
Default value

1500.0 s*uA
Program usage name

Q_rr_diode
Evaluatable

Yes

Snubbers

# Snubber — snubber model
None | RC snubber

Details

Switching device model with noise suppressor.

Values

None | RC snubber
Default value

None
Program usage name

snubber_option
Evaluatable

No

# Snubber capacitance — snubber capacity
F | mF | nF | pF | uF

Details

Snubber capacity.

Dependencies

To use this parameter, set parameter Snubber value RC snubber.

Units

F | mF | nF | pF | uF
Default value

1e-07 F
Program usage name

C_s
Evaluatable

Yes

# Snubber resistance — snubber resistance
Ohm | GOhm | MOhm | kOhm | mOhm

Details

Snubber resistance.

Dependencies

To use this parameter, set parameter Snubber value RC snubber.

Units

Ohm | GOhm | MOhm | kOhm | mOhm
Default value

0.1 Ohm
Program usage name

R_s
Evaluatable

Yes